BU406, BU407
NPN SILICON POWER TRANSISTORS
●
●
●
7 A Continuous Collector Current
15 A Peak Collector Current
60 W at 25°C Case Temperature
B
C
E
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= -2 V)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
10 ms, duty cycle
≤
2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
V
CBO
V
CEX
V
CEO
V
EB
I
C
I
CM
I
B
P
tot
T
j
T
stg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
=
30 mA
I
B
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
=
4A
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
f = 1 MHz
f = 1 MHz
(see Note 4)
6
60
12
20
1
1.2
V
V
MHz
pF
T
C
= 150°C
T
C
= 150°C
BU406
BU407
BU406
BU407
BU406
BU407
TEST CONDITIONS
MIN
140
5
5
0.1
0.1
1
1
1
mA
mA
TYP
MAX
UNIT
V
V
CE
= 400 V
V
CE
= 330 V
I
CES
Collector-emitter
cut-off current
V
CE
= 250 V
V
CE
= 200 V
V
CE
= 250 V
V
CE
= 200 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
t
C
ob
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CB
=
6V
10 V
10 V
0.5 A
0.5 A
5V
20 V
I
C
= 0.5 A
I
C
=
I
C
=
5A
5A
I
C
= 0.5 A
I
E
= 0
NOTES: 2. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain f
t
the [h
FE
] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1.
FE
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
70
UNIT
°C/W
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
s
t
(off)
†
TEST CONDITIONS
I
C
= 5 A
I
B(end)
= 0.5A
†
MIN
(see Figures 1 and 2)
TYP
2.7
MAX
750
UNIT
µs
ns
Storage time
Turn off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BU406, BU407
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
V BB+
5.6
Ω
22
Ω
7.5
Ω
BY205
V cc = 24V
47
Ω
SET
IB
100
Ω
100
Ω
+4V
INPUT
0
2N5337
2N6191
TIP31
TIP31
TIP31
1 k
Ω
14.8
µH
TUT
50
Ω
TIP32
TIP32
Current
Probes
5 pF
OUTPUT
BY205
240
µH
22
Ω
V BB-
22
Ω
Figure 1. Inductive-Load Switching Test Circuit
64
µs
42
µs
I
B(end)
50%
0
IB
t
IC
0
s
0.1 A
t off
t
off
is the time for the collector
current I
C
to decrease to 0.1 A
Vfly
after the collector to emitter
voltage V
CE
has risen 3 V into
its flyback excursion.
V
CE
0
3V
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
70
TCD124AA
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50
TCD124AB
60
h
FE
- Typical DC Current Gain
50
h
FE
- Typical DC Current Gain
T
C
= 100°C
t
p
< 300 µs
d < 2%
V
CE
= 5 V
40
T
C
= 25°C
t
p
< 300 µs
d < 2%
40
T
C
= 25°C
30
30
20
20
10
10
T
C
= -55°C
0
0·1
V
CE
= 1 V
V
CE
= 5 V
V
CE
= 10 V
1·0
I
C
- Collector Current - A
10
0
0·1
1·0
I
C
- Collector Current - A
10
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·8
0·7
0·6
0·5
0·4
0·3
0·2
0·1
0
-60 -40 -20
I
C
= 4 A
I
B
= 0.5 A
TCD124AC
t
p
< 300 µs
d < 2%
I
C
= 8 A
I
B
= 2 A
0
20
40
60
80 100 120 140 160
T
C
- Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BU406, BU407
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAD124AA
I
C
- Collector Current - A
1·0
0·1
0.01
1·0
10
BU407
BU406
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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