BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
MECHANICAL DATA
Case:
SOD-57 sintered glass case
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
• Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits an switch mode power
supply
ORDERING INFORMATION
(Example)
DEVICE NAME
BY203-20S
BY203-20S
ORDERING CODE
BY203-20STR
BY203-20STAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BY203-12S
BY203-16S
BY203-20S
TYPE DIFFERENTIATION
V
R
= 1200 V; I
F(AV)
= 250 mA
V
R
= 1600 V; I
F(AV)
= 250 mA
V
R
= 2000 V; I
F(AV)
= 250 mA
PACKAGE
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction temperature range
Storage temperature range
I
(BR)R
= 0.4 A
TEST CONDITION
l
R
= 100 μA
t
p
= 10 ms, half sine wave
PART
BY203-12S
BY203-16S
BY203-20S
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
E
R
T
j
T
stg
VALUE
1200
1600
2000
20
250
10
- 55 to + 150
- 55 to + 175
UNIT
V
V
V
A
mA
mJ
°C
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
Maximum lead length
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Rev. 1.9, 12-Sep-12
Document Number: 86002
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
I
F
= 200 mA, t
p
/T = 0.01, t
p
= 0.3ms
V
R
= 700 V
V
R
= 1000 V
V
R
= 1200 V
Breakdown voltage
Reverse recovery time
l
R
= 100 μA, t
p
/T = 0.01, t
p
= 0.3 ms
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BY203-12S
BY203-16S
BY203-20S
BY203-12S
BY203-16S
BY203-20S
PART
SYMBOL
V
F
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
t
rr
MIN.
-
-
-
-
1200
1600
2000
-
TYP.
-
-
-
-
-
-
-
-
MAX.
2.4
2
2
2
-
-
-
300
UNIT
V
μA
μA
μA
V
V
V
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
240
200
160
120
80
40
0
0
949080
0.30
I
FAV
- Average Forward Current (A)
T
j
- Junction Temperature (°C)
R
thJA
= 45 K/W
I = 10 mm
0.25
0.20
0.15
0.10
0.05
0
V
R
= V
RRM
half
sinewave
0
30
60
90
120
150
R
thJA
= 100 K/W
PCB: d = 25 mm
V
RRM
BY203/12
BY203/16
V
R
BY203/20
400
800
1200
1600
16398
V
R
, V
RRM
- Rev./Rep. Peak Rev. Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
V
R
= V
RRM
1
T
j
= 175 °C
0.1
T
j
= 25 °C
I
R
- Reverse Current (μA)
4
5.0
I
F
- Forward Current (A)
100
10
0.01
0.001
0
16397
1
2
3
1
25
16399
50
75
100
125
150
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.9, 12-Sep-12
Document Number: 86002
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
18
P
R
- Reverse Power Dissipation (mW)
500
V
R
= V
RRM
400
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
C
D
- Diode Capacitance (pF)
16
14
12
10
8
6
4
2
0
0.1
1
10
f = 1 MHz
300
200
100
0
25
50
75
100
125
150
16401
100
16400
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.9, 12-Sep-12
Document Number: 86002
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
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www.vishay.com
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Revision: 08-Feb-17
1
Document Number: 91000