BSC252N10NSFGXT datasheet, PDF

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BSC252N10NSFGXT: DescriptionMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2; Categorysemiconductor Discrete semiconductor; File Size653KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2

BSC252N10NSFGXT Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	19.5 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	78 W
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	1.27 mm
Length	5.9 mm
Transistor Type	1 N-Channel
Width	5.15 mm
Forward Transconductance - Min	18 S
Fall Time	4 ns
NumOfPackaging	3
Rise Time	21 ns
Factory Pack Quantity	5000
Typical Turn-Off Delay Time	16 ns
Typical Turn-On Delay Time	11 ns

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BSC252N10NSFGXT Related Products

	BSC252N10NSFGXT	BSC252N10NSFGATMA1
Description	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
Configuration	Single	SINGLE WITH BUILT-IN DIODE

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