DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
Features
UNDER DEVELOPMENT
SOT-363
A
NEW PRODUCT
·
·
·
Mechanical Data
·
·
·
·
·
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approx.)
K
J
P/N
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
R1
22K
47K
10K
2.2K
10K
4.7K
10K
R2
22K
47K
47K
47K
10K
-
-
MARKING
P17
P20
P14
P06
P13
P07
P12
R
1
R
2
R
2
R
1
R
1
R
1
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
All
Value
50
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100
-200
-55 to +150
Unit
V
Characteristic
Output Current
Output Current
Power Dissipation
Operating and Storage and Temperature Range
DS30346 Rev. 1 - 1
1 of 2
PXX YM
PXX YM
H
D
F
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDC)
Built-In Biasing Resistors
Dim
A
B
B C
Min
0.10
1.15
2.00
0.30
1.80
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
2.20
0.10
1.00
0.40
0.25
C
D
E
G
M
0.65 Nominal
H
J
K
L
M
L
All Dimensions in mm
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM
V
IN
V
I
O
mA
I
C
(Max)
P
d
T
j
, T
STG
mA
mW
°C
DDA (xxxx) U
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Min
-50
-50
-5
¾
¾
¾
100
¾
Typ
¾
¾
¾
¾
¾
¾
250
250
Min
-0.5
-0.5
-0.3
-0.5
-0.5
¾
Max
¾
¾
¾
-0.5
-0.5
-0.3
600
¾
Typ
-1.1
-1.1
--
--
-1.1
-1.9
-1.9
--
--
-1.9
Unit
V
V
V
mA
mA
V
¾
MHz
Max
¾
V
Unit
Test Condition
I
C
= -50mA
I
C
= -1mA
I
E
= -50mA
V
CB
= -50V
V
EB
= -4V
I
C
/I
B
= -2.5mA / -0.25mA
I
C
/I
B
= -1mA / -0.1mA
DDA143TU
DDA114TU
NEW PRODUCT
Characteristic (DDA143TU & DDA114TU only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
Characteristic
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
I
C
= -1mA, V
CE
= -5V
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Test Condition
Symbol
V
l(off)
V
CC
= -5V, I
O
= -100mA
Input Voltage
V
l(on)
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Output Voltage
V
O(on)
¾
-0.1
-0.3
V
Input Current
I
l
¾
¾
56
68
68
80
30
¾
¾
¾
¾
-0.36
-0.18
-0.88
-3.6
-0.88
-0.5
¾
mA
mA
¾
V
I
= -5V
Output Current
I
O(off)
V
CC
= -50V, V
I
= -0V
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
DC Current Gain
G
l
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
250
¾
MHz
UNDER DEVELOPMENT
DS30346 Rev. 1 - 1
2 of 2
DDA (xxxx) U
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