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BUK961R6-40E118

Description
MOSFET N-Chan 40V 120A
Categorysemiconductor    Discrete semiconductor   
File Size728KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET N-Chan 40V 120A

BUK961R6-40E118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance1.6 mOhms
Vgs th - Gate-Source Threshold Voltage1.7 V
Vgs - Gate-Source Voltage15 V
Qg - Gate Charge120 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation357 W
Channel ModeEnhancement
PackagingReel
Transistor Type1 N-Channel
Fall Time119 ns
NumOfPackaging1
Rise Time118 ns
Factory Pack Quantity800
Typical Turn-Off Delay Time195 ns
Typical Turn-On Delay Time95 ns
Unit Weight0.139332 oz
BUK961R6-40E
28 July 2016
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
40
120
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
1.35
1.6
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 25 A; V
DS
= 32 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
40.9
-
nC
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