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MUN2232T1G

Description
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
CategoryDiscrete semiconductor    The transistor   
File Size126KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MUN2232T1G Overview

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

MUN2232T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318D-04
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.338 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MUN2232, MMUN2232L,
MUN5232, DTC143EE,
DTC143EM3, NSBC143EF3
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 4.7 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
October, 2016 − Rev. 3
Publication Order Number:
DTC143E/D

MUN2232T1G Related Products

MUN2232T1G MUN5232T1G NSVMMUN2232LT1G NSBC143EF3T5G
Description Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRANSISTOR
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor -
Is it lead-free? Lead free Lead free Lead free -
Contacts 3 3 3 -
Manufacturer packaging code 318D-04 419-04 318-08 -
Reach Compliance Code compliant compliant compliant -
ECCN code EAR99 EAR99 EAR99 -
Factory Lead Time 1 week 6 weeks 4 weeks -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A -
Minimum DC current gain (hFE) 15 15 15 -
JESD-609 code e3 e3 e3 -
Humidity sensitivity level 1 1 1 -
Number of components 1 1 1 -
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED -
Polarity/channel type NPN NPN NPN -
Maximum power dissipation(Abs) 0.338 W 0.31 W 0.4 W -
surface mount YES YES YES -
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) -
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED -
Transistor component materials SILICON SILICON SILICON -
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