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X28HC64JZ-12T1

Description
EEPROM 8K X 8 EEPROM,CMOS,HIGH SPEED,PLCC,120NS,PB FREE,T&R
Categorystorage   
File Size778KB,18 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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X28HC64JZ-12T1 Overview

EEPROM 8K X 8 EEPROM,CMOS,HIGH SPEED,PLCC,120NS,PB FREE,T&R

X28HC64JZ-12T1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerIntersil ( Renesas )
Product CategoryEEPROM
Package / CasePLCC-32
Memory Size64 kbit
Organization8 k x 8
Interface TypeParallel
Access Time120 ns
Data Retention100 Year
Supply Current - Max40 mA
Supply Voltage - Min4.5 V
Supply Voltage - Max5.5 V
Minimum Operating Temperature0 C
Maximum Operating Temperature+ 70 C
NumOfPackaging1
Operating Supply Current40 mA
Operating Supply Voltage5 V
Programming Voltage4.5 V to 5.5 V
DATASHEET
X28HC64
64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM
The
X28HC64
is an 8k x 8 EEPROM, fabricated with Intersil’s
proprietary, high performance, floating gate CMOS technology.
Like all Intersil programmable nonvolatile memories, the
X28HC64 is a 5V only device. It features the JEDEC approved
pinout for byte-wide memories, compatible with industry
standard RAMs.
The X28HC64 supports a 64-byte page write operation, effectively
providing a 32µs/byte write cycle, and enabling the entire
memory to be typically written in 0.25 seconds. The X28HC64
also features DATA Polling and Toggle Bit Polling, two methods
providing early end of write detection. In addition, the X28HC64
includes a user-optional software data protection mode that
further enhances Intersil’s hardware write protect capability.
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Inherent data retention is
greater than 100 years.
FN8109
Rev 4.00
June 27, 2016
Features
• 70ns access time
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
P-P
control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- 40mA active current maximum
• 200µA standby current maximum
• Fast write cycle times
- 64-byte page write operation
- Byte or page write cycle: 2ms typical
- Complete memory rewrite: 0.25s typical
- Effective byte write cycle time: 32µs typical
• Software data protection
• End of write detection
- DATA polling
- Toggle bit
• High reliability
- Endurance: 100,000 cycles
- Data retention: 100 years
• JEDEC approved byte-wide pinout
• Pb-free available (RoHS compliant)
Pin Configurations
X28HC64
(28 LD PDIP, SOIC)
TOP VIEW
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
X28HC64
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
NC
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
7
X28HC64
(32 LD PLCC)
TOP VIEW
V
CC
WE
A
12
NC
NC
NC
29
28
27
X28HC64
26
25
24
23
4 3
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
I/O
0
5
6
7
8
9
10
11
2 1 32 31 30
A
8
A
9
A
11
NC
OE
A
10
CE
I/O
7
I/O
6
22
12
21
13
14 15 16 17 18 19 20
I/O
1
I/O
2
V
SS
NC
I/O
3
I/O
4
I/O
5
FN8109 Rev 4.00
June 27, 2016
Page 1 of 18
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