BLF7G24L-100;
BLF7G24LS-100
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation f
(MHz)
IS-95
1 carrier W-CDMA
[1]
[2]
I
Dq
(mA)
900
900
V
DS
(V)
28
28
P
L(AV)
(W)
20
30
G
p
(dB)
18
18.7
D
(%)
27
33
ACPR
885k
ACPR
5M
(dBc)
46
[1]
-
(dBc)
-
40
[2]
2300 to 2400
2300 to 2400
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF7G24L-100 (SOT502A)
1
3
2
2
3
sym112
1
BLF7G24LS-100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G24L-100
BLF7G24LS-100
-
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
28
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
0.3
Unit
K/W
BLF7G24L-100_7G24LS-100#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 14
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 150 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5.35 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
Min
65
1.5
-
Typ
-
1.8
-
Max Unit
-
2.3
5
-
500
-
V
V
A
A
nA
S
25.1 29
-
-
-
-
0.1
10.5 -
7. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2300 MHz; f
2
= 2400 MHz; RF performance at V
DS
= 28 V; I
Dq
= 900 mA;
T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
Min Typ Max Unit
-
-
22
-
20
-
-
-
W
dB
dB
%
dBc
17.3 18
27
14
-
46 40
7.1 Ruggedness in class-AB operation
The BLF7G24L-100 and BLF7G24LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W (CW); f = 2300 MHz.
BLF7G24L-100_7G24LS-100#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 14
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
19.5
G
p
(dB)
18.5
(2)
001aan495
50
η
D
(%)
40
(1)
(2)
001aan496
(1)
30
20
17.5
10
16.5
0
20
40
60
P
L
(W)
80
0
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
load power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of load power; typical values
-20
APCR
885k
(dBc)
-30
(2)
001aan497
-30
APCR
1980k
(dBc)
-40
001aan498
-40
(1)
-50
(2)
(1)
-50
-60
-60
-70
-70
0
20
40
60
P
L
(W)
80
-80
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
BLF7G24L-100_7G24LS-100#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 14
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
12
PAR
(dB)
8
001aan499
200
P
L(M)
(W)
160
(1)
(2)
001aan500
120
(1)
80
4
(2)
40
0
0
20
40
60
P
L
(W)
80
0
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 6.
Single carrier IS-95 peak power as a function
of load power; typical values
BLF7G24L-100_7G24LS-100#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 14
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