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VS-1EFH01-M3-I

Description
Rectifiers Hypfst Rect 1A 100V
Categorysemiconductor    Discrete semiconductor   
File Size111KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Rectifiers Hypfst Rect 1A 100V

VS-1EFH01-M3-I Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryRectifiers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseDO-219AB-2
Vr - Reverse Voltage100 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage740 mV
Max Surge Current35 A
Ir - Reverse Current500 nA
Recovery Time25 ns
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductRectifiers
NumOfPackaging3
Factory Pack Quantity10000
Unit Weight0.005291 oz
VS-1EFH01-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
Cathode
Anode
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-219AB (SMF)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
(typ. 125 °C)
t
rr
T
J
max.
Package
Diode variation
1A
100 V
0.74 V
25 ns
175 °C
DO-219AB (SMF)
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperature range
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
(1)
T
J
= 25 °C
TEST CONDITIONS
VALUES
100
1
35
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 100 V
MIN.
100
-
-
-
-
-
TYP.
-
0.87
0.74
-
0.5
5
MAX.
-
0.93
0.8
2
8
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 28-Jun-16
Document Number: 95783
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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