CMLDM8005-TR datasheet, PDF - EEWORLD Datasheet

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CMLDM8005-TR: DescriptionMOSFET SMD- Small Signal P-Channel Mosfet; Categorysemiconductor Discrete semiconductor; File Size1MB，4 Pages; ManufacturerCentral Semiconductor

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MOSFET SMD- Small Signal P-Channel Mosfet

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Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Central Semiconductor
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-563-6
Number of Channels	2 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 20 V, - 20 V
Id - Continuous Drain Current	- 650 mA, - 650 mA
Rds On - Drain-Source Resistance	250 mOhms, 250 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V, 1 V
Vgs - Gate-Source Voltage	- 8 V, - 8 V
Qg - Gate Charge	1.2 nC, 1.2 nC
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Pd - Power Dissipation	350 mW
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Transistor Type	2 P-Channel
Forward Transconductance - Min	200 mS, 200 mS
NumOfPackaging	3
Factory Pack Quantity	3000
Typical Turn-Off Delay Time	48 ns, 48 ns
Typical Turn-On Delay Time	38 ns, 38 ns
Unit Weight	0.000106 oz

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CMLDM8005

SURFACE MOUNT SILICON

DUAL P-CHANNEL

ENHANCEMENT-MODE

MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM8005

consists of dual P-Channel enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer very low

rDS(ON) and low threshold voltage.

MARKING CODE: CC8

FEATURES:

• ESD protection up to 1800V (Human Body Model)

• 350mW power dissipation

• Very low rDS(ON)

• Low threshold voltage

• Logic level compatible

• Small, SOT-563 surface mount package

• Complementary dual N-Channel device: CMLDM7005

SYMBOL

VDS

VGS

IDM

TJ, Tstg

UNITS

°C

°C/W

SOT-563 CASE

APPLICATIONS:

• Load switch/Level shifting

• Battery charging

• Boost switch

• Electro-luminescent backlighting

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State - Note 1)

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

8.0

650

250

1.0

350

300

150

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IGSSF, IGSSR VGS=4.5V, VDS=0

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

VDS=16V, VGS=0

VGS=0, ID=250μA

VDS=VGS, ID=250μA

VGS=0, IS=250mA

VGS=4.5V,

VGS=2.5V,

ID=350mA

ID=300mA

100

0.5

0.25

0.37

1.0

1.1

0.36

0.5

0.8

UNITS

μA

VGS=1.8V, ID=150mA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

R6 (8-June 2015)

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