*R
oH
S
TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
CO
M
PL
IA
NT
TISP4xxxH4BJ Overvoltage Protector Series
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310
High Holding Current ........................................... 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
SMBJ Package (Top View)
R(B)
1
2
T(A)
MDXXBG
Device
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
V
DRM
V
135
145
155
200
230
275
V
(BO)
V
165
180
200
265
300
350
Device Symbol
T
Rated for International Surge Wave Shapes
Waveshape
2/10
μs
8/20
μs
10/160
μs
10/700
μs
10/560
μs
10/1000
μs
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
500
300
250
200
160
100
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Low Differential Capacitance .................................. 67 pF max.
.............................................. UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
How To Order
Device
TISP4xxxH4BJ
Package
BJ (J-Bend DO-214AA/SMB)
Carrier
Embossed Tape Reeled
Bulk Pack
Order As
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Insert xxx value corresponding to protection voltages of 165 through to 350.
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
NOVEMBER 1997 - REVISED JANUARY 2007
*RoHS Directive 2002/95/EC Jan. 27, 2003 including Annex.
Specifications are subject to change without notice. Users should verify actual device performance in their specific
applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the
last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
Symbol
Value
±135
±145
±155
±200
±230
±275
500
300
250
220
200
200
200
160
100
55
60
2.1
400
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
μs
(GR-1089-CORE, 2/10
μ
s voltage wave shape)
8/20
μs
(IEC 61000-4-5, 1.2/50
μ
s voltage, 8/20 current combination wave generator)
10/160
μs
(FCC Part 68, 10/160
μ
s voltage wave shape)
5/200
μs
(VDE 0433, 10/700
μ
s voltage wave shape)
0.2/310
μs
(I3124, 0.5/700
μ
s voltage wave shape)
5/310
μs
(ITU-T K .20/21, 10/700
μ
s voltage wave shape)
5/310
μs
(FTZ R12, 10/700
μ
s voltage wave shape)
10/560
μs
(FCC Part 68, 10/560
μ
s voltage wave shape)
10/1000
μs
(GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
I
TSP
A
I
TSM
di
T
/dt
T
J
T
stg
A
A/μs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T
J
= 25
°C.
The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25
°C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
I
DRM
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= V
DRM
T
A
= 25
°C
T
A
= 85
°C
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
±0.15
±0.225
±5
±10
90
84
79
67
74
62
35
28
33
26
Min.
Typ.
Max.
±5
±10
±165
±180
±200
±265
±300
±350
±174
±189
±210
±276
±311
±363
±0.8
±3
±0.8
Unit
μA
V
(BO)
Breakover voltage
dv/dt =
±750
V/ms, R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000
V/μs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/μs, Linear current ramp,
Maximum ramp value =
±10
A
dv/dt =
±750
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A, t
W
= 100
μs
I
T
=
±5
A, di/dt = -/+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±
50 V
f = 100 kHz, V
d
= 1 V rms, V
D
= 0,
f = 100 kHz, V
d
= 1 V rms, V
D
= -1 V
V
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
A
V
A
kV/μs
μA
C
off
Off-state capacitance
f = 100 kHz, V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz, V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz, V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
T
A
= 85
°C
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
80
70
71
60
65
55
30
24
28
22
pF
NOTE
6: To avoid possible voltage clipping, the ‘4125 is tested with V
D
= -98 V.
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
50
Min.
Typ.
Max.
113
°C /W
Unit
R
θ
JA
Junction to free air thermal resistance
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BO)
I
(BO)
-v
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
I
H
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
100
V
D
=
±50
V
TCHAG
1.10
Normalized Breakover Voltage
10
|I
D
| - Off-State Current -
μA
1.05
1
0·1
1.00
0·01
0·001
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
0.95
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
Figure 2 .
Figure 3.
200
150
100
70
I
T
- On-State Current - A
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC4HAHA
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4HAK
T
A
= 25
°C
t
W
= 100
μs
Normalized Holding Current
'4265
THRU
'4350
1
'4165
THRU
'4200
1.5
2
3
4 5
V - On-State Voltage - V
7
10
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
Figure 4.
NOVEMBER 1997 - REVISED JANUARY 2007
Figure 5.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
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