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Datasheet> All Categories > Discrete semiconductor> The transistor> BD546B
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BD546B

Description
15 A, 80 V, PNP, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size80KB，5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric Compare View All

BD546B Overview

15 A, 80 V, PNP, Si, POWER TRANSISTOR

BD546B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

BD546B Preview

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
●
●
●
●
Designed for Complementary Use with the
BD545 Series
85 W at 25°C Case Temperature
15 A Continuous Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD546
Collector-base voltage (I
E
= 0)
BD546A
BD546B
BD546C
BD546
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD546A
BD546B
BD546C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD546
V
(BR)CEO
I
C
= -30 mA
(see Note 4)
V
CE
= -40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-2 A
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
-1 A
-5 A
-5 A
(see Notes 4 and 5)
60
25
10
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
-0.8
-1
-1.8
V
V
I
B
= 0
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
BD546/546A
BD546B/546C
MIN
-40
-60
-80
-100
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
C
= -10 A
I
C
= -10 A
I
C
= -10 A
I
C
= -0.5 A
I
C
= -0.5 A
V
CE(sat)
V
BE
h
fe
I
B
= -625 mA
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.47
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -6 A
V
BE(off)
= 4 V
I
B(on)
= -0.6 A
R
L
= 5
Ω
†
MIN
I
B(off)
= 0.6 A
t
p
= 20 µs, dc
≤
2%
TYP
0.4
0.7
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS634AJ
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS634AB
I
C
=
I
C
=
I
C
=
I
C
=
-1·0
-1 A
-3 A
-6 A
-10 A
h
FE
- DC Current Gain
100
10
-0·1
1
-0·1
-1·0
I
C
- Collector Current - A
-10
-0·01
-0·01
-0·1
-1·0
-10
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
V
CE
= -4 V
T
C
= 25 °C
V
BE
- Base-Emitter Voltage - V
-1·4
TCS634AC
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AE
I
C
- Collector Current - A
-10
-1·0
-0·1
BD546
BD546A
BD546B
BD546C
-10
-100
-1000
-0·01
-1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS633AC
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
1,37
1,17
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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BD546B Related Products

BD546B BD546A BD546C
Description 15 A, 80 V, PNP, Si, POWER TRANSISTOR 15 A, 60 V, PNP, Si, POWER TRANSISTOR 15 A, 100 V, PNP, Si, POWER TRANSISTOR
Is it Rohs certified? incompatible incompatible incompatible
Maker Bourns Bourns Bourns
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A 15 A
Collector-emitter maximum voltage 80 V 60 V 100 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON

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