BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary PNP types is the BDX88C.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 6 K
Ω
R
2
Typ. = 55
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
Value
BDX87C
BDX88C
100
100
5
12
18
0.2
o
Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
June 1997
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T
c
≤ 25
C
Storage Temperature
Max. Operating Junction Temperature
V
V
V
A
A
A
W
o
o
120
-65 to 200
200
C
C
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BDX87C-BDX88C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.45
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= 100 V
V
CB
= 100 V
V
CB
= 50 V
V
EB
= 5 V
I
C
= 100 mA
T
case
Min.
= 150
o
C
Typ.
Max.
0.5
5
1
1
Unit
mA
mA
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
V
BE
∗
h
FE
∗
Collector-emitter
Saturation Voltage
Base-emitter
Saturation Voltage
Base-emitter Voltage
DC Current Gain
100
I
C
= 6 A
I
C
= 12 A
I
C
= 12 A
I
C
= 6 A
I
C
= 5 A
I
C
= 6 A
I
C
= 12 A
I
F
= 3 A
I
F
= 8 A
I
C
= 5 A
f = 1MHz
I
B
= 24 mA
I
B
= 120 mA
I
B
=120 mA
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
1000
750
100
2.5
V
CE
= 3 V
25
2
3
4
2.8
18000
1.8
V
V
V
V
V
F
∗
h
fe
∗
Parallel-diode Forward
Voltage
Small SignalCurrent
Gain
V
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
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BDX87C-BDX88C
TO-3 MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
0.97
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.15
1.65
8.92
20.00
11.10
17.20
26.00
4.09
39.30
30.30
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
inch
TYP.
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003F
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E
BDX87C-BDX88C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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