FDZ7296
November 2004
FDZ7296
30V N-Channel PowerTrench
®
BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and R
DS(ON)
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Features
11 A, 30 V.
R
DS(ON)
= 8.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 12 mΩ @ V
GS
= 4.5 V
•
•
•
•
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8.
Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
High performance trench technology for extremely
low R
DS(ON)
Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
Applications
•
High-side Mosfet in DC-DC converters for Server
and Notebook applications
D
D
S
S
S
D
S
S
S
S
D
D
Pin 1
S
S
S
S
7296
G
Pin 1
G
D
S
D
Top
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Ratings
30
±20
11
20
2.1
–55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R
θJA
R
θJB
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
60
6.3
0.6
°C/W
Package Marking and Ordering Information
Device Marking
7296
Device
FDZ7296
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2004
Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)
FDZ7296
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
mV/°C
1
±100
µA
nA
V
mV/°C
mΩ
Off Characteristics
27
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 11 A
V
GS
= 4.5V,
I
D
= 10 A
V
GS
= 10 V, I
D
= 11 A, T
J
=125°C
V
DS
= 15 V,
f = 1.0 MHz
V
DS
= 5 V,
V
GS
= 15 mV,
V
GS
= 0 V,
1
1.8
–4.9
7
9
9.1
1520
420
130
46
1.1
10
4
27
13
22
3
8.5
12
13
Dynamic Characteristics
C
iss
C
oss
C
rss
g
FS
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Gate Resistance
(Note 2)
pF
pF
pF
S
Ω
20
8
43
23
31
17
ns
ns
ns
ns
nC
nC
nC
nC
1.7
1.2
A
V
nS
nC
I
D
= 11 A
f = 1.0 MHz
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 1.7 A
Voltage
Diode Reverse Recovery Time
I
F
= 11A
d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
V
DD
= 15 V,
I
D
= 11 A,
12
4.5
3.1
Drain–Source Diode Characteristics and Maximum Ratings
(Note 2)
0.7
28
(Note 2)
18
Notes:
1.
R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a)
60°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
108°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ7296 Rev B(W)
FDZ27296
Dimensional Outline and Pad Layout
FDZ7296 Rev B(W)
FDZ7296
Typical Characteristics
20
V
GS
= 10.0V
6.0V
I
D
, DRAIN CURRENT (A)
15
4.5V
3.0V
10
4.0V
3.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4
V
GS
= 3.0V
3
2
3.5V
4.0V
4.5V
6.0V
10.0V
5
1
2.5V
0
0
0.5
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1.5
0
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 11A
V
GS
= 10V
I
D
=5.5 A
0.02
1.4
1.2
0.015
T
A
= 125 C
0.01
T
A
= 25
o
C
o
1
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
20
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
15
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
10
T
A
= 125
o
C
25
o
C
1
T
A
= 125 C
10
25 C
-55 C
5
o
o
o
0.1
0.01
-55
o
C
0.001
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7296 Rev B(W)
FDZ7296
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 11A
2000
f = 1MHz
V
GS
= 0 V
8
CAPACITANCE (pF)
V
DS
= 10V
20V
1600
C
iss
6
15V
1200
4
800
C
oss
2
400
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
1ms
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θJA
= 108°C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
40
10
100ms
1s
10ms
30
1
DC
10s
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 108 C/W
T
A
= 25 C
o
20
0.1
10
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.01
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 108 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7296 Rev B(W)
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