EC2645TS-3.6864M
REGULATORY COMPLIANCE
2011/65 +
2015/863
(Data Sheet downloaded on Feb 17, 2018)
174 SVHC
ITEM DESCRIPTION
Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)
3.6864MHz ±50ppm -10°C to +70°C
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Tolerance/Stability
Aging at 25°C
Operating Temperature Range
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Pin 1 Connection
Output Control Input Voltage Logic
High (Vih)
Output Control Input Voltage Logic
Low (Vil)
Standby Current
RMS Phase Jitter
Start Up Time
Storage Temperature Range
3.6864MHz
±50ppm Maximum (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability over the Operating
Temperature Range, Supply Voltage Change, Ouput Load Change, First Year Aging at 25°C, Shock, and Vibration)
±5ppm/year Maximum
-10°C to +70°C
3.3Vdc ±10%
10mA Maximum
90% of Vdd Minimum (IOH=-8mA)
10% of Vdd Maximum (IOL=+8mA)
5nSec Maximum (w/15pF Load), 7nSec Maximum (w/30pF Load) (Measured at 20% to 80% of waveform)
50 ±10(%) (Measured at 50% of waveform)
30pF Maximum
CMOS
Tri-State (High Impedance)
70% of Vdd Minimum or No Connect to Enable Output
30% of Vdd Maximum to Disable Output (High Impedance)
10µA Maximum (Disabled Output: High Impedance)
1pSec Maximum (12kHz to 20MHz offset frequency)
10mSec Maximum
-55°C to +125°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
ESD Susceptibility
Fine Leak Test
Flammability
Gross Leak Test
Mechanical Shock
Moisture Resistance
Moisture Sensitivity
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 3015, Class 1, HBM: 1500V
MIL-STD-883, Method 1014, Condition A
UL94-V0
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 1004
J-STD-020, MSL 1
MIL-STD-202, Method 210, Condition K
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010, Condition B
MIL-STD-883, Method 2007, Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Revision W 06/01/2015 | Page 1 of 6
Ecliptek, LLC
5458 Louie Lane, Reno, NV 89511
1-800-ECLIPTEK or 714.433.1200
EC2645TS-3.6864M
Test Circuit for CMOS Output
Oscilloscope
Frequency
Counter
+
+
Power
Supply
_
+
Voltage
Meter
_
Current
Meter
_
Supply
Voltage
(V
DD
)
Probe
(Note 2)
Output
0.01µF
(Note 1)
0.1µF
(Note 1)
Ground
C
L
(Note 3)
No Connect
or Tri-State
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Revision W 06/01/2015 | Page 4 of 6
Ecliptek, LLC
5458 Louie Lane, Reno, NV 89511
1-800-ECLIPTEK or 714.433.1200
EC2645TS-3.6864M
Recommended Solder Reflow Methods
High Temperature Infrared/Convection
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
3°C/Second Maximum
150°C
175°C
200°C
60 - 180 Seconds
3°C/Second Maximum
217°C
60 - 150 Seconds
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
20 - 40 Seconds
6°C/Second Maximum
8 Minutes Maximum
Level 1
Temperatures shown are applied to body of device.
www.ecliptek.com | Specification Subject to Change Without Notice | Revision W 06/01/2015 | Page 5 of 6
Ecliptek, LLC
5458 Louie Lane, Reno, NV 89511
1-800-ECLIPTEK or 714.433.1200
Embedded System
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