STD16NE10L
N-channel 100V - 0.07Ω - 16A - DPAK
STripFET™ Power MOSFET
General features
Type
STD16NE10L
■
■
■
■
■
V
DSSS
100V
R
DS(on)
<0.10Ω
I
D
16A
3
1
Avalanche rugged technology
Low gate charge
High current capability
175°C operating temperature
Low threshold drive
DPAK
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD16NE10LT4
Marking
D16NE10L
Package
DPAK
Packaging
Tape & reel
August 2006
Rev 3
1/13
www.st.com
13
Contents
STD16NE10L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STD16NE10L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (1)
P
TOT
E
AS (2)
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20KΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Single pulse avalanche energy
Value
100
100
± 20
16
11
64
90
0.6
75
7
-55 to 175
Max. operating junction temperature
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
dv/dt
(3)
Peak diode recovery voltage slope
T
stg
T
J
Storage temperature
1. Pulse width limited by safe operating area
2. Starting T
J
= 25
o
C, I
D
= 8A, V
DD
= 30V
3. I
SD
≤
16A, di/dt
≤
300 A/µs, V
DS
≤
V
(BR)DSS
, T
J
≤
T
JMAX
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
1.67
100
275
Unit
°C/W
°C/W
°C
3/13
Electrical characteristics
STD16NE10L
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On
(1)
/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8A
V
GS
= 5V, I
D
= 8A
1
1.7
0.07
0.085
Min.
100
1
10
Typ.
Max.
Unit
V
µA
µA
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1.
±100
2.5
0.085
0.01
nA
V
Ω
Ω
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DSv
> I
D(on)
x R
DS(on)max
I
D
= 8A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Min.
5
Typ.
9
1750
165
45
24
5.5
11
32
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DD
= 80V, I
D
= 16A
V
GS
= 5V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
V
DD
= 50V, I
D
= 8A,
R
G
= 4.7Ω, V
GS
= 4.5V
Figure 12 on page 8
V
clamp
= 80 V, I
D
= 16 A
R
G
= 4.7Ω, V
GS
= 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
40
80
45
12
12
17
35
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
4/13
STD16NE10L
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM (1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 16A, V
GS
= 0
I
SD
= 16A,
di/dt = 100A/µs,
V
DD
= 40V, T
J
= 150°C
Figure 14 on page 8
100
300
6
Test conditions
Min
Typ.
Max
16
64
1.5
Unit
A
A
V
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
京公网安备 11010802033920号
EEWORLD
