STK16C88-3 datasheet, PDF - EEWORLD Datasheet

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STK16C88-3: Description32K X 8 NON-VOLATILE SRAM, 35 ns, PDIP28; Categorystorage; File Size103KB，11 Pages; ManufacturerETC

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STK16C88-3 Overview

32K X 8 NON-VOLATILE SRAM, 35 ns, PDIP28

STK16C88-3 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	28
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	3 V
Rated supply voltage	3.3 V
maximum access time	35 ns
Processing package description	0.600 INCH, ROHS COMPLIANT, PLASTIC, MS-011, DIP-28
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	IN-LINE
Terminal form	THROUGH-HOLE
Terminal spacing	2.54 mm
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	32K X 8
storage density	262144 deg
operating mode	ASYNCHRONOUS
Number of digits	32768 words
Number of digits	32K
Memory IC type	NON-VOLATILE SRAM
serial parallel	PARALLEL

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STK16C88-3

32K x 8

AutoStorePlus™

nvSRAM

3.3V

QuantumTrap™

CMOS

Nonvolatile Static RAM

FEATURES

• Transparent Data Save on Power Down

• Internal Capacitor Guarantees

AutoStore™

Regardless of Power-Down Slew Rate

• Directly Replaces 32K x 8 Static RAM, Battery-

Backed RAM or EEPROM

• 35 Access Time

•

STORE

to Nonvolatile Elements Initiated by

Software or

AutoStorePlus™

•

RECALL

to SRAM Initiated by Software or

Power Restore

• 10mA Typical I

at 200ns Cycle Time

• Unlimited READ, WRITE and

RECALL

Cycles

• 1,000,000

STORE

Cycles to Nonvolatile Ele-

ments (Commercial/Industrial)

• 100-Year Data Retention in nonvolatile ele-

ments (Commercial/Industrial)

• Single 3.3V

0.3V Operation

• Commercial and Industrial Temperatures

• 28-Pin PDIP Package

BLOCK DIAGRAM

QUANTUM TRAP

512 x 512

STORE/

RECALL

CONTROL

DESCRIPTION

The STK16C88-3 is a fast

SRAM

with a nonvolatile

element incorporated in each static memory cell.

The

SRAM

can be read and written an unlimited

number of times, while independent nonvolatile data

resides in Nonvolatile Elements. Data transfers from

the

SRAM

to the Nonvolatile Elements (the

STORE

operation) can take place automatically on power

down. An internal capacitor guarantees the

STORE

operation regardless of power-down slew rate.

Transfers from the Nonvolatile Elements to the

SRAM

(the

RECALL

operation) take place automati-

cally on restoration of power. Initiation of

STORE

and

RECALL

cycles can also be controlled by entering

control sequences on the

SRAM

inputs. The

STK16C88-3 is pin-compatible with 32k x 8

SRAM

and battery-backed

SRAM

s, allowing direct substitu-

tion while providing superior performance. The

STK14C88-3, which uses an external capacitor, is

also available.

PIN CONFIGURATIONS

STORE

STATIC RAM

ARRAY

512 x 512

RECALL

POWER

CONTROL

INTERNAL

CAPACITOR

ROW DECODER

28 - 600 PDIP

INPUT BUFFERS

COLUMN I/O

COLUMN DEC

SOFTWARE

DETECT

- A

PIN NAMES

- A

Address Inputs

Write Enable

Data In/Out

Chip Enable

Output Enable

Power (+ 3.3V)

Ground

- DQ

March 2006

Document Control # ML0019 rev 0.2

STK16C88-3 Related Products

	STK16C88-3	STK16C88-3WF35	STK16C88-3WF35I
Description	32K X 8 NON-VOLATILE SRAM, 35 ns, PDIP28	32K X 8 NON-VOLATILE SRAM, 35 ns, PDIP28	32K X 8 NON-VOLATILE SRAM, 35 ns, PDIP28
Number of functions	1	1	1
Number of terminals	28	28	28
Maximum operating temperature	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V
Minimum supply/operating voltage	3 V	3 V	3 V
Rated supply voltage	3.3 V	3.3 V	3.3 V
maximum access time	35 ns	35 ns	35 ns
Processing package description	0.600 INCH, ROHS COMPLIANT, PLASTIC, MS-011, DIP-28	0.600 INCH, ROHS COMPLIANT, PLASTIC, MS-011, DIP-28	0.600 INCH, ROHS COMPLIANT, PLASTIC, MS-011, DIP-28
state	ACTIVE	ACTIVE	ACTIVE
Craftsmanship	CMOS	CMOS	CMOS
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	IN-LINE	IN-LINE	IN-LINE
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal spacing	2.54 mm	2.54 mm	2.54 mm
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN
Terminal location	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	8	8	8
organize	32K X 8	32K X 8	32K X 8
storage density	262144 deg	262144 deg	262144 deg
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Memory IC type	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
serial parallel	PARALLEL	PARALLEL	PARALLEL
Number of digits	32K	32K	32K

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