SOT23 SILICON DUAL
VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998
FEATURES
* VHF to UHF operation
* Common Cathode Dual Diode
* Monolithic construction
APPLICATIONS
* Mobile radios and Pagers
* Cellular telephones
* Voltage controlled Crystal Oscillators
PARTMARKING DETAIL ZDC833A – C2A
PIN CONFIGURATION
1
ZDC833A
2
1
3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER
Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
VALUE
200
330
-55 to +150
UNIT
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ). (Each Diode)
PARAMETER
Reverse Breakdown
Voltage
Reverse Leakage
Current
Temperature
Coefficient
Diode Capacitance
Capacitance Ratio
Figure of Merit
SYMBOL
V
BR
MIN.
25
TYP.
MAX.
UNIT
V
CONDITIONS.
I
R
= 10µA
V
R
= 20V
I
R
η
0.2
10
nA
400
ppm/°C
V
R
= 3V, f=1MHz
C
d
C
d
/ C
d
Q
29.7
5.0
200
33
36.3
6.5
pF
V
R
= 2V, f=1MHz
V
R
= 2V/20V, f=1MHz
V
R
= 3V, f=50MHz
ZDC833A
TYPICAL CHARACTERISTICS
100
1200
T
j
= 25 to 125°C
800
10
400
Capacitance (pF)
0.1
1
10
100
Temp. Coefficient (PPM/ °C)
0
0.1
1
1
10
100
V
R
- Reverse Voltage (V)
V
R
- Reverse Voltage (V)
Capacitance v Reverse Voltage
Temp. Coefficient v Reverse Voltage
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