ZXMN3B01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
=30V : R
DS(on)
=0.15 ; I
D
=2A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
SOT23
APPLICATIONS
•
DC-DC Converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3B01FTA
ZXMN3B01FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
3B1
TOP VIEW
ISSUE 1 - DECEMBER 2005
1
ZXMN3B01F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=4.5V; T
A
=25°C
(b)
@ V
GS
=4.5V; T
A
=70°C
(b)
@ V
GS
=4.5V; T
A
=25°C
(a)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
Linear Derating Factor
Power Dissipation at T
A
=25°C
Linear Derating Factor
(a)
(b)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
12
2.0
1.6
1.7
UNIT
V
V
A
A
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
T
j
, T
stg
9.4
1.3
9.4
625
5
806
6.4
-55 to +150
(b)
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
2
ZXMN3B01F
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
3
SEMICONDUCTORS
ZXMN3B01F
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1) (3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
30
1
100
0.7
0.150
0.240
4
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
= 12V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=4.5V, I
D
=1.7A
V
GS
=2.5V, I
D
=1.2A
S
V
DS
=15V,I
D
=1.7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
258
50
30
pF
pF
pF
V
DS
= 15V, V
GS
=0V,
f=1MHz
2.69
3.98
8
5.27
2.93
0.57
0.92
ns
ns
ns
ns
nC
nC
nC
V
DS
=15V,V
GS
= 4.5V,
I
D
=1.7A
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1A
R
G
≅
6.0
V
SD
t
rr
Q
rr
0.85
10.85
5
0.95
V
ns
NC
T
J
=25°C, I
S
= 1.7A,
V
GS
=0V
T
J
=25°C, I
F
= 1.3A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
4
ZXMN3B01F
CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
5
SEMICONDUCTORS
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