2SJ681
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
６．５±０．２
５．２±０．２
１．５±０．２
Unit: mm
０．６ MAX．
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
=
−100
µA (max) (V
DS
=
−60
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V
(V
DS
=
−10
V, I
D
=
−1
mA)
１．６
Low drain−source ON resistance: R
DS (ON)
= 0.12
Ω
(typ.)
０．９
５．５±０．２
4-V gate drive
１．１±０．２
４．１±０．２
５．７
０．６ MAX
２．３
２．３
２．３±０．２
０．６±０．１５
０．６±０．１５
１
２
３
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−60
−60
±20
−5
−20
20
40.5
−5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
０．８ MAX．
１．1 MAX．
Pulse(Note 1)
JEDEC
JEITA
TOSHIBA
―
―
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
−25
V, T
ch
= 25°C (initial), L = 2.2 mH,
R
G
= 25
Ω,
I
AR
=
−5
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-06-30
2SJ681
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −48
V, V
GS
=
−10
V, I
D
=
−5
A
Duty
<
1%, t
w
=
10
µs
=
0V
V
GS
−10
V
4.7
Ω
I
D
=
−2.5
A
Output
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−60
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 20 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−2.5
A
V
GS
=
−10
V, I
D
=
−2.5
A
V
DS
=
−10
V, I
D
=
−2.5
A
Min
—
—
−60
−35
−0.8
—
—
2.5
—
Typ.
—
—
—
—
—
0.16
0.12
5.0
700
60
90
14
24
Max
±10
−100
—
—
−2.0
0.25
0.17
—
—
—
—
—
—
Unit
µA
µA
V
V
V
Ω
S
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
—
—
—
—
pF
Switching time
R
L
=
12
Ω
V
DD
∼
−30
V
−
ns
Fall time
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
—
14
95
15
11
4
—
—
—
—
—
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Qrr
Test Condition
—
—
I
DR
=
−5
A, V
GS
= 0 V
I
DR
=
−5
A, V
GS
= 0 V
dl
DR
/ dt = 50 A / µS
Min
—
—
—
—
—
Typ.
—
—
—
40
32
Max
−5
−20
1.7
—
—
Unit
A
A
V
ns
nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-06-30
2SJ681
I
D
– V
DS
−5
−8
−10
−6
−4.
−3.5
Common source
Tc
=
25°C
Pulse test
−10
−10
−8
−6
−4
I
D
– V
DS
Common source
Tc
=
25°C
Pulse test
−3.5
−6
Drain current I
D
(A)
−3
−2.8
−2
VGS
= −2.5V
−1
Drain current I
D
(A)
−4
−3
−8
−4
−3
−2
VGS
= −2.5
V
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
0
0
−2
−4
−6
−8
−10
Drain−source voltage
V
DS
(V)
Drain−source voltage
V
DS
(V)
I
D
– V
GS
−10
Common source
VDS
= −10
V
Pulse test
−2.0
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
(V)
−1.6
Drain current I
D
(A)
V
DS
25
−8
−4
Drain−source voltage
−6
−1.2
−0.8
−5
−0.4
−2.5
ID
= −1.2
A
0
0
−4
−8
−12
−16
−20
−2
100
Tc
= −55°C
0
0
−1
−2
−3
−4
−5
Gate−source voltage V
GS
(V)
Gate−source voltage V
GS
(V)
⎪Y
fs
⎪ −
I
D
(S)
100
Common source
VDS
= −10
V
Pulse test
0.5
Common source
Tc
=
25°C
Pulse test
R
DS (ON)
−
I
D
Forward transfer admittance
⎪Y
fs
⎪
Drain−source ON resistance
R
DS (ON)
(Ω)
0.4
10
Tc
= −55°C
100
25
0.3
0.2
−4
V
1
0.1
VGS
= −10V
0.1
−0.1
−1
−10
−100
0
0
−2
−4
−6
−8
−10
Drain current I
D
(A)
Drain current I
D
(A)
3
2006-06-30
2SJ681
R
DS (ON)
−
Tc
−0.4
Common source
Pulse test
10
Common source
Tc
=
25°C
Pulse test
I
DR
−
V
DS
−5
−10
−0.3
−2.5
ID
= −5
A
−1.2
Drain reverse current I
DR
(A)
Drain−source ON resistance
R
DS (ON)
(Ω)
−3
−0.2
VGS
= −4
V
−1.2
−0.1
VGS
= −10
V
0
−80
−2.5
−5
1
−1
VGS
=
0 V
0.1
−40
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1.0
1.2
Case temperature Tc
(°C)
Drain−source voltage
V
DS
(V)
Capacitance – V
DS
10000
Common source
V
th
−
Tc
−2.0
Tc
=
25°C
1000
Ciss
Gate threshold voltage V
th
(V)
VGS
=
0 V
f
=
1 MHz
(pF)
−1.6
Common source
VDS
= −10
V
ID
=
1 mA
Pulse test
Capacitance C
−1.2
100
Coss
−0.8
Crss
10
−0.1
−0.4
−1
−10
−100
0
−80
−40
0
40
80
120
160
Drain−source voltage
V
DS
(V)
Case temperature
Tc
(°C)
P
D
−
Tc
40
−50
VDS
Dynamic input/output
characteristics
−25
ID
= −5
A
−40
Ta
=
25°C
Pulse test
−30
−15
Drain power dissipation P
D
(W)
(V)
30
20
Drain−source voltage V
DS
−20
−12V
−24V
−10
10
−10
VGS
0
VDD
= −48
V
−5
0
0
40
80
120
160
200
0
5
10
15
20
25
30
0
Case temperature
Tc
(°C)
Total gate charge
Q
g
(nC)
4
2006-06-30
Gate−source voltage V
GS
−20
(V)
Common source
2SJ681
r
th
−
t
w
10
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
Duty
=
0.5
0.2
0.1
Single Pulse
PDM
0.05
0.02
0.01
t
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
100
µ
1m
10 m
100 m
1
10
0.1
0.01
10
µ
Pulse width
t
w
(s)
Safe operating area
−100
50
E
AS
– T
ch
(mJ)
1 ms
*
100
µs
*
ID max (pulsed)
*
40
(A)
−10
E
AS
Avalanche energy
Drain current
I
D
ID max (continuous)
DC operation
Tc
=
25°C
30
20
−1
*:
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
10
VDSS max
−10
−100
−0.1
−0.1
0
25
50
75
100
125
150
−1
Channel temperature (initial) Tch
(°C)
Drain-source voltage
V
DS
(V)
0V
−15
V
B
VDSS
I
AR
V
DD
Test circuit
V
DS
Wave form
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
VDSS
−
VDD
⎠
⎝
R
G
=
25
Ω
V
DD
= −25
V, L
=
2.2 mH
5
2006-06-30
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