ZTX749STOB datasheet, PDF - EEWORLD Datasheet

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ZTX749STOB: DescriptionBipolar Transistors - BJT PNP Super E-Line; Categorysemiconductor Discrete semiconductor; File Size78KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX749STOB Overview

Bipolar Transistors - BJT PNP Super E-Line

ZTX749STOB Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 25 V
Collector- Base Voltage VCBO	- 35 V
Emitter- Base Voltage VEBO	- 5 V
Maximum DC Collector Current	2 A
Gain Bandwidth Product fT	160 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	- 2 A
NumOfPackaging	1
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 APRIL 94

FEATURES

* 25 Volt V

CEO

* 2 Amp continuous current

* Low saturation voltage

ZTX749

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j:

T

stg

E-Line

TO92 Compatible

VALUE

-35

-25

-5

-6

-2

1

5.7

-55 to +200

UNIT

V

A

W

mW/ °C

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

-35

-25

-5

-0.1

-10

-0.1

-0.12

-0.23

-0.9

-0.8

70

100

75

15

200

150

50

-0.3

-0.5

-1.25

-1

TYP.

MAX.

UNIT

V

µ

A

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-30V

V

CB

=-30V,

T

amb

=100°C

V

EB

=-4V, I

E

=0

I

C

=1A, I

B

=-100mA*

I

C

=2A, I

B

=-200mA*

I

C

=1A, I

B

=-100mA*

IC=-1A, V

CE

=-2V*

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-6A, V

CE

=-2V*

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

V

CE(sat)

V

BE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

300

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3-254

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