ZTX551 datasheet, PDF - EEWORLD Datasheet

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ZTX551: DescriptionBipolar Transistors - BJT PNP Medium Power; Categorysemiconductor Discrete semiconductor; File Size116KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX551 Overview

Bipolar Transistors - BJT PNP Medium Power

ZTX551 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 60 V
Collector- Base Voltage VCBO	- 80 V
Emitter- Base Voltage VEBO	- 5 V
Collector-Emitter Saturation Voltage	- 0.35 V
Maximum DC Collector Current	1 A
Gain Bandwidth Product fT	150 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	- 1 A
NumOfPackaging	1
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX550

ZTX551

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

-60

-45

-5

-2

-1

E-Line

TO92 Compatible

ZTX550 ZTX551

-80

-60

UNIT

V

A

W

mW/ °C

°C

1

5.7

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

100

15

150

ZTX550

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-60

-45

-5

-0.1

-0.25

-1.1

300

50

10

150

MAX. MIN.

-80

-60

-5

ZTX551

MAX.

UNIT

V

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-45V

V

CB

=-60V

V

EB

=-4V

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

-0.1

-0.35

-1.1

150

µ

A

µ

A

µ

A

V

MHz

I

C

=-50mA, V

CE

=-10V

f=100MHz

3-194

ZTX551 Related Products

	ZTX551	ZTX550
Description	Bipolar Transistors - BJT PNP Medium Power	Bipolar Transistors - BJT PNP Medium Power
Product Attribute	Attribute Value	Attribute Value
Manufacturer	Diodes	Diodes
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Details	Details
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	- 60 V	- 45 V
Collector- Base Voltage VCBO	- 80 V	- 60 V
Emitter- Base Voltage VEBO	- 5 V	- 5 V
Collector-Emitter Saturation Voltage	- 0.35 V	- 0.25 V
Maximum DC Collector Current	1 A	1 A
Gain Bandwidth Product fT	150 MHz	150 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Height	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm
Packaging	Bulk	Bulk
Width	2.41 mm	2.41 mm
Continuous Collector Current	- 1 A	- 1 A
Pd - Power Dissipation	1 W	1 W
Factory Pack Quantity	4000	4000
Unit Weight	0.016000 oz	0.016000 oz

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