BAV70 series
High-speed switching diodes
Rev. 07 — 27 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
-
-
-
Package
configuration
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
Type number
TO-236AB small
leadless ultra
small
very small
ultra small
very small
1.2 Features
I
High switching speed: t
rr
≤
4 ns
I
Low leakage current
I
Small SMD plastic packages
I
Low capacitance: C
d
≤
1.5 pF
I
Reverse voltage: V
R
≤
100 V
1.3 Applications
I
High-speed switching
I
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
µA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAV70 series
High-speed switching diodes
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode (diode 1)
anode (diode 2)
common cathode
1
2
006aaa144
Simplified outline
Symbol
BAV70; BAV70T; BAV70W
3
1
006aab034
3
2
BAV70M
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
1
3
2
Transparent
top view
1
006aab034
3
2
BAV70S
1
2
3
4
5
6
anode (diode 1)
anode (diode 2)
common cathode (diode 3
and diode 4)
anode (diode 3)
anode (diode 4)
common cathode (diode 1
and diode 2)
1
2
3
1
2
3
006aab104
6
5
4
6
5
4
3. Ordering information
Table 4.
Ordering information
Package
Name
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
-
SC-101
SC-88
SC-75
SC-70
Description
plastic surface-mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
Version
SOT23
SOT883
SOT363
SOT416
SOT323
Type number
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
2 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
4. Marking
Table 5.
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
A4*
S4
A4*
A4
A4*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
I
FRM
repetitive peak forward
current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
I
FSM
non-repetitive peak forward square wave
current
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
[1]
Parameter
Conditions
Min
-
-
Max
100
100
215
150
250
150
175
Unit
V
V
mA
mA
mA
mA
mA
T
amb
≤
25
°C
T
s
= 90
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
-
-
-
-
-
-
-
-
-
450
500
450
500
500
4
1
0.5
mA
mA
mA
mA
mA
A
A
A
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
3 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Per device
I
F
forward current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
[2]
Min
-
[3]
Max
250
250
350
170
200
Unit
mW
mW
mW
mW
mW
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
T
amb
≤
25
°C
T
s
= 90
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
-
-
−65
−65
125
75
100
75
100
150
+150
+150
mA
mA
mA
mA
mA
°C
°C
°C
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
BAV70
BAV70M
BAV70W
R
th(j-t)
thermal resistance from
junction to tie-point
BAV70
BAV70W
R
th(j-sp)
thermal resistance from
junction to solder point
BAV70S
BAV70T
[1]
[2]
BAV70_SER_7
Thermal characteristics
Parameter
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
[2]
-
-
-
500
500
625
K/W
K/W
K/W
-
-
-
-
-
-
360
300
K/W
K/W
-
-
-
-
255
350
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
4 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
[3]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
[2]
[3]
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
100
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 0 V; f = 1 MHz
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
5 of 15
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