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MA4P303-134

Description
PIN Diodes 20-18000MHz .15pF Max Vr 200Vdc
CategoryDiscrete semiconductor    diode   
File Size920KB,8 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
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MA4P303-134 Overview

PIN Diodes 20-18000MHz .15pF Max Vr 200Vdc

MA4P303-134 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionS-CUUC-N1
Contacts1
Reach Compliance Codecompliant
Other featuresLOW DISTORTION
applicationSWITCHING
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance0.15 pF
Nominal diode capacitance0.15 pF
Diode component materialsSILICON
Maximum diode forward resistance1.5 Ω
Diode resistance test current10 mA
Diode typePIN DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeS-CUUC-N1
Minority carrier nominal lifetime0.3 µs
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation5 W
Certification statusNot Qualified
Reverse test voltage10 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Silicon PIN Chips
Rev. V22
Features
Switch & Attenuator Die
Extensive Selection of I-Region Lengths
Hermetic
Glass Passivated Cermachip
Oxide Passivated Planar Chips
Voltage Ratings to 3000 V
Fast Switching Speed
Low Loss
High Isolation
RoHS* Compliant
Anode
Description
MACOM offers a comprehensive line of low
capacitance, planar and mesa, silicon PIN diode
chips which use ceramic glass and silicon nitride
passivation technology. The silicon PIN chip series
of devices cover a broad spectrum of performance
requirements for control circuit applications. They
are available in several choices of I-region lengths
and have been optimally designed to minimize
parametric trade offs when considering low
capacitance, low series resistance, and high
breakdown voltages. Their small size and low
parasitics, make them an ideal choice for
broadband, high frequency, micro-strip hybrid
assemblies.
The attenuator line of PIN diode chips are a planar
or mesa construction and because of their thicker
I-regions and predictable R
S
vs. I characteristics,
they are well suited for low distortion attenuator
and switch circuits. Incorporated in the chip’s
construction is MACOM’s, time proven, hard glass,
Cermachip process. The hard glass passivation
completely encapsulates the entire PIN junction area
resulting in a hermetically sealed chip which has
been qualified in many military applications. These
Cermachip diodes are available in a wide range of
voltages, up to 3,000 volts, which are capable of
controlling kilowatts of RF power.
Many of MACOM ’s silicon PIN diode chips are also available
in several different package styles. Please refer to the
“Packaged PIN Diode Datasheet” for case style availability
and electrical specifications located on the MACOM website.
Also for high voltage, high power devices refer to
MA4PK2000.
Full Area Cathode
Absolute Maximum Ratings
1
T
A
= +25°C (
Unless otherwise specified
)
Parameter
Forward Current (I
F
)
Reverse Voltage (V
R
)
Power Dissipation (W)
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
Absolute Maximum
Per P/N R
s
vs. I Graph
Per Specification Table
175°C – T
ambient
°C
Theta
-55°C to +175°C
-55°C to +200°C
+175°C
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage to the
chip
1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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