MCP660/1/2/3/4/5/9
60 MHz, 6 mA Op Amps
Features
•
•
•
•
•
•
•
•
Gain Bandwidth Product: 60 MHz (typical)
Short Circuit Current: 90 mA (typical)
Noise: 6.8 nV/Hz (typical, at 1 MHz)
Rail-to-Rail Output
Slew Rate: 32 V/µs (typical)
Supply Current: 6.0 mA (typical)
Power Supply: 2.5V to 5.5V
Extended Temperature Range: -40°C to +125°C
Description
The Microchip Technology, Inc. MCP660/1/2/3/4/5/9
family of operational amplifiers (op amps) features high
gain bandwidth product (60 MHz, typical) and high out-
put short circuit current (90 mA, typical). Some also
provide a Chip Select pin (CS) that supports a low
power mode of operation. These amplifiers are opti-
mized for high speed, low noise and distortion, single-
supply operation with rail-to-rail output and an input
that includes the negative rail.
This family is offered in single (MCP661), single with
CS pin (MCP663), dual (MCP662) and dual with two
CS pins (MCP665), triple (MCP660), quad (MCP664)
and quad with two CS pins (MCP669). All devices are
fully specified from -40°C to +125°C.
Typical Applications
•
•
•
•
Driving A/D Converters
Power Amplifier Control Loops
Barcode Scanners
Optical Detector Amplifier
Typical Application Circuit
V
DD
/2
V
IN
R
1
R
3
MCP66X
Power Driver with High Gain
R
2
V
OUT
R
L
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
2009-2011 Microchip Technology Inc.
DS22194B-page 1
MCP660/1/2/3/4/5/9
Package Types
MCP661
SOIC
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP662
SOIC
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
-
5 V
INB
+
MCP663
SOIC
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
MCP660
4x4 QFN*
V
OUTC
V
INC
-
NC
NC
MCP669
4x4 QFN*
V
OUTD
V
OUTA
CS
AD
V
IND
-
MCP662
3x3 DFN*
V
OUTA
1
12 V
IND
+
V
INA
- 2
V
INA
+ 3
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
-
5 V
INB
+
16 15 14 13
NC 1
NC 2
V
DD
3
V
INA
+ 4
5
V
INA
-
6
V
OUTA
7
NC
8
V
OUTB
EP
17
12 V
INC
+
11 V
SS
10 V
INB
+
9 V
INB
-
V
INA
- 1
V
INA
+ 2
V
DD
3
V
INB
+ 4
16 15 14 13
EP
17
5
V
INB
-
6
V
OUTB
7
CS
BC
8
V
OUTC
11 V
SS
10 V
INC
+
9 V
INC
-
MCP665
3x3 DFN*
V
OUTA
V
INA
-
V
INA
+
V
SS
CS
A
1
2
3
4
5
10
V
DD
MCP660
SOIC, TSSOP
NC 1
NC 2
NC 3
V
DD
4
V
INA
+ 5
V
INA
- 6
V
OUTA
7
14 V
OUTC
13 V
INC
-
12 V
INC
+
11 V
SS
10 V
INB
+
9 V
INB
-
8 V
OUTB
MCP664
SOIC, TSSOP
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
- 6
V
OUTB
7
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
EP
11
9
8
7
6
V
OUTB
V
INB
-
V
INB
+
CS
B
MCP665
MSOP
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
SS
4
CS
A
5
10 V
DD
9 V
OUTB
8 V
INB
-
7 V
INB
+
6 CS
B
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
DS22194B-page 2
2009-2011 Microchip Technology Inc.
MCP660/1/2/3/4/5/9
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† . V
SS
– 1.0V to V
DD
+ 1.0V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM)
1 kV, 200V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
††
See
Section 4.1.2 “Input Voltage and Current
Limits”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
and CS = V
SS
(refer to
Figure 1-2).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common Mode Input
Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
Open Loop Gain
DC Open Loop Gain
(large signal)
A
OL
A
OL
Note 1:
2:
88
94
117
126
—
—
dB
dB
V
DD
= 2.5V, V
OUT
= 0.3V to
2.2V
V
DD
= 5.5V, V
OUT
= 0.3V to
5.2V
V
CMR
CMRR
CMRR
V
SS
0.3
64
66
—
79
81
V
DD
1.3
—
—
V
dB
dB
(Note
1)
V
DD
= 2.5V, V
CM
= -0.3 to 1.2V
V
DD
= 5.5V, V
CM
= -0.3 to 4.2V
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
6
130
1700
±10
10 ||9
10
13
||2
13
Sym
V
OS
V
OS
/T
A
PSRR
Min
-8
—
61
Typ
±1.8
±2.0
76
Max
+8
—
—
—
—
5,000
—
—
—
Units
mV
Conditions
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
pA
pA
||pF
||pF
T
A
= +85°C
T
A
= +125°C
See
Figure 2-5
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
2009-2011 Microchip Technology Inc.
DS22194B-page 3
MCP660/1/2/3/4/5/9
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
and CS = V
SS
(refer to
Figure 1-2).
Parameters
Output
Maximum Output Voltage Swing V
OL
, V
OH
V
OL
, V
OH
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
V
DD
I
Q
2.5
3
—
6
5.5
9
V
mA
No Load Current
I
SC
I
SC
V
SS
+ 25
V
SS
+ 50
±45
±40
—
—
±90
±80
V
DD
25
V
DD
50
±145
±150
mV
mV
mA
mA
V
DD
= 2.5V, G = +2,
0.5V Input Overdrive
V
DD
= 5.5V, G = +2,
0.5V Input Overdrive
V
DD
= 2.5V
(Note
2)
V
DD
= 5.5V
(Note
2)
Sym
Min
Typ
Max
Units
Conditions
See
Figure 2-5
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
, C
L
= 20 pF and CS = V
SS
(refer to
Figure 1-2).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Open Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Differential Gain, Positive Video
(Note
1)
Differential Gain, Negative Video
(Note
1)
Differential Phase, Positive Video
(Note
1)
Differential Phase, Negative Video
(Note
1)
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Note 1:
E
ni
e
ni
i
ni
—
—
14
6.8
4
—
—
—
µV
P-P
f = 0.1 Hz to 10 Hz
nV/Hz f = 1 MHz
fA/Hz f = 1 kHz
t
r
SR
—
—
5
32
—
—
ns
V/µs
G = +1, V
OUT
= 100 mV
P-P
G = +1
THD+N
DG
—
—
0.003
0.3
—
—
%
%
G = +1, V
OUT
= 2V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V, DC V
IN
= 0V to
0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V,
DC V
IN
= 0V to -0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V,
DC V
IN
= 0V to 0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V,
DC V
IN
= 0V to -0.7V
GBWP
PM
R
OUT
—
—
—
60
65
10
—
—
—
MHz
°
G = +1
Sym
Min
Typ
Max
Units
Conditions
DG
—
0.3
—
%
DP
—
0.3
—
°
DP
—
0.9
—
°
These specifications are described in detail in
Section 4.3 “Distortion”.
(NTSC refers to a National
Television Standards Committee signal.)
DS22194B-page 4
2009-2011 Microchip Technology Inc.
MCP660/1/2/3/4/5/9
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
, C
L
= 20 pF and CS = V
SS
(refer to
Figure 1-1
and
Figure 1-2).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
CS Internal Pull Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High-Z)
CS Low to Amplifier On Time
V
HYST
t
OFF
t
ON
—
—
—
0.25
200
2
—
—
10
V
ns
µs
G = +1 V/V, V
L
= V
SS
CS = 0.8V
DD
to V
OUT
= 0.1(V
DD
/2)
G = +1 V/V, V
L
= V
SS
,
CS = 0.2V
DD
to V
OUT
= 0.9(V
DD
/2)
V
IH
I
CSH
I
SS
R
PD
I
O(LEAK
)
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
SS
—
—
-0.1
0.2V
D
D
V
nA
CS = 0V
—
0.8V
D
D
V
DD
-0.7
-1
5
40
—
—
—
—
V
µA
µA
M
nA
CS = V
DD
, T
A
= +125°C
CS = V
DD
—
-2
—
—
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Parameters
Sym
T
A
T
A
T
A
JA
JA
JA
JA
JA
JA
JA
Min
-40
-40
-65
—
—
—
—
—
—
—
Typ
—
—
—
56.7
149.5
53.3
202
95.3
100
45.7
Max
+125
+125
+150
—
—
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
(Note
2)
(Note
2)
(Note
1)
Conditions
Electrical Characteristics:
Unless indicated, all limits are specified for: V
DD
= +2.5V to +5.5V, V
SS
= GND.
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-3x3 DFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 10L-3x3 DFN
Thermal Resistance, 10L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Thermal Resistance, 16L-QFN
Note 1:
2:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (+150°C).
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
2009-2011 Microchip Technology Inc.
DS22194B-page 5
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