IS42S16100-7T datasheet, PDF - EEWORLD Datasheet

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IS42S16100-7T: Description512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM; File Size672KB，79 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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IS42S16100

512K Words x 16 Bits x 2 Banks (16-MBIT)

SYNCHRONOUS DYNAMIC RAM

FEATURES

• Clock frequency: 166, 143, 125, 100 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Two banks can be operated simultaneously and

independently

• Dual internal bank controlled by A11 (bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Auto refresh, self refresh

• 4096 refresh cycles every 128 ms

• Random column address every clock cycle

• Programmable

CAS

latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

• Burst termination by burst stop and precharge

command

• Byte controlled by LDQM and UDQM

• Package 400-mil 50-pin TSOP II

ISSI

SEPTEMBER 2000

DESCRIPTION

ISSI

's 16Mb Synchronous DRAM IS42S16100 is organized

as a 524,288-word x 16-bit x 2-bank for improved

performance. The synchronous DRAMs achieve high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

VCC

I/O0

I/O1

GNDQ

I/O2

I/O3

VCCQ

I/O4

I/O5

GNDQ

I/O6

I/O7

VCCQ

LDQM

CAS

RAS

A11

A10

VCC

GND

I/O15

I/O14

GNDQ

I/O13

I/O12

VCCQ

I/O11

I/O10

GNDQ

I/O9

I/O8

VCCQ

UDQM

CLK

CKE

GND

PIN DESCRIPTIONS

A0-A11

A0-A10

A11

A0-A7

I/O0 to I/O15

CLK

CKE

RAS

Address Input

Row Address Input

Bank Select Address

Column Address Input

Data I/O

System Clock Input

Clock Enable

Chip Select

Row Address Strobe Command

CAS

LDQM

UDQM

Vcc

GND

VccQ

GNDQ

Column Address Strobe Command

Write Enable

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

Ground

Power Supply for I/O Pin

Ground for I/O Pin

No Connection

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100-7T Related Products

	IS42S16100-7T	IS42S16100-6T	IS42S16100-8T
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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