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ZXMP2120FFTA

Description
MOSFET 200V P-CHANNEL
Categorysemiconductor    Discrete semiconductor   
File Size401KB,10 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZXMP2120FFTA Overview

MOSFET 200V P-CHANNEL

ZXMP2120FFTA Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 200 V
Id - Continuous Drain Current- 137 mA
Rds On - Drain-Source Resistance28 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1 mm
Length3 mm
ProductMOSFET Small Signal
Transistor Type1 P-Channel
Width1.7 mm
Fall Time15 ns
Rise Time15 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time12 ns
Typical Turn-On Delay Time7 ns
Unit Weight0.000282 oz
ZXMP2120FF
200V SOT23F P-channel enhancement mode MOSFET
Summary
V
(BR)DSS
-200
R
DS
(on)
( )
28 @ V
GS
= -10V
I
D
(mA)
-137
Description
This 200V enhancement mode P-channel MOSFET provides users with
a competitive specification offering efficient power handling capability,
high impedance and freedom from thermal runaway and thermally
induced secondary breakdown.
Applications benefiting from this device include a variety of telecom
and general high voltage circuits.
Features
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
SOT23 FLAT package
D
G
S
Applications
Active clamping of primary side MOSFETs in 48 volt DC-DC
converters
S
D
Ordering information
Device
ZXMP2120FFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3,000
G
Top view
Device marking
1C4
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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