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BSO200P03SHXUMA1

Description
MOSFET SMALL SIGNAL+P-CH
CategoryDiscrete semiconductor    The transistor   
File Size324KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSO200P03SHXUMA1 Overview

MOSFET SMALL SIGNAL+P-CH

BSO200P03SHXUMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)98 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)7.4 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)36.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSO200P03S H
OptiMOS™-P
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
-30
20
-9.1
V
mΩ
A
PG-DSO-8
Type
BSO200P03S H
Package
PG-DSO-8
Marking
200P3S
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
≤10
secs
Continuous drain current
I
D
T
A
=25 °C
1)
T
A
=70 °C
1)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD rating
Soldering temperature
IEC climatic category; DIN IEC 68-1
260
55/150/56
°C
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
1)
2.36
T
A
=25 °C
2)
I
D
=-9.1 A,
R
GS
=25
-9.1
-7.3
-36.4
98
±25
1.56
mJ
V
W
°C
steady state
-7.4
-5.9
A
Unit
-55 ... 150
Rev. 1.3
page 1
2010-02-15

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