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MRF-160

Description
RF MOSFET Transistors 5-500MHz 4Watts 28Volt Gain 16dB
Categorysemiconductor    Discrete semiconductor   
File Size854KB,12 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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MRF-160 Overview

RF MOSFET Transistors 5-500MHz 4Watts 28Volt Gain 16dB

MRF-160 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMACOM
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current1 A
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain18 dB
Output Power4 W
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / Case249-06
PackagingTray
ConfigurationSingle
Operating Frequency500 MHz
TypeRF Power MOSFET
Pd - Power Dissipation24 W
Factory Pack Quantity50
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage3 V
MRF160
The RF MOSFET Line: Broadband Power FET
4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and
driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
Rev. V1
Product Image
Guaranteed 28 V, 500 MHz performance
Output power = 4.0 W
Gain = 16 dB (min.)
Efficiency = 55% (typ.)
Excellent thermal stability, ideally suited for Class A operation
Facilitates manual gain control, ALC and modulation techniques
100% Tested for load mismatch at all phase angles with 30:1 VSWR
Low Crss – 0.8 pF Typical at VDS = 28 V
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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