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BLP05H6110XRY

Description
RF MOSFET Transistors Power LDMOS Transistor
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLP05H6110XRY Overview

RF MOSFET Transistors Power LDMOS Transistor

BLP05H6110XRY Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingReel
Moisture SensitiveYes
Factory Pack Quantity100
BLP05H6110XR
Power LDMOS transistor
Rev. 3 — 3 February 2016
Product data sheet
1. Product profile
1.1 General description
A 110 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
108
V
DS
(V)
50
P
L
(W)
110
G
p
(dB)
27
D
(%)
75
Test signal
1.2 Features and benefits
Easy power control
Integrated double sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
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