Over Recommended Operating Conditions. Typical conditions of +25°C and 3.3V power supply.
Table 1. DC Characteristics
Symbol
V
DD
I
DD
PSRR
λ
f
C
BW
S
R
o
V
D
R
D
Z
T
V
DC
∆V
DC
NEP
O
V
NO
DCD
I
OUT
PDJ
Parameter
Supply Voltage
Supply Current
Power Supply Rejection Ratio
Wavelength
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
Single-Ended Output Impedance
Differential Output Voltage
Differential Responsivity
Differential Transimpedance
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
Pattern Dependent Jitter (rms)
Optically Active Area
PPJ
t
R
t
F
Peak-to-Peak Jitter
Rise Time
Fall Time
1.
P = Incident Optical Power.
Min
3.0
Typ
3.3
Max
3.6
40
Unit
V
mA
Condition
Frequencies up to 40MHz.
–10
700
840
1.0
1000
–18.2
1300
–20
25
0.18
2.8
4.0
7.0
1.0
200
0.8
1.1
1.40
4.5
2.0
2.6
30
70
100
120
200
200
850
2.5
dB
nm
MHz
MHz
dBm
Ω
V
mV/µW
kΩ
V
mV
µW
rms
mV rms
%
mA
ps
µm
ps
ps
ps
P = 0mW
P = 0mW, single-ended
P = –5dBm
P = –5dBm
P = –5dBm
±10% voltage window
Diameter
P = -5dBm
20% to 80% P = –5dBm
20% to 80% P = –5dBm
P = –6 dBm,
R
L
= 100Ω differential
R
L
= 100Ω. At 50MHz
–3dB, P
(1)
= –15dBm
–3dB, P = –15dBm
2.5Gb/s, BER10
–12
,
PRBS2
7
–1
Use external filter to get
PSRR of -35dB.
2 of 10
G52363, Rev 4.2
2/6/03
VSC7807
Data Sheet
Table 2. Recommended Operating Conditions
Symbol
V
DD
Parameter
Power Supply Voltage
Optical Power
T
Operating Temperature Range
(1)
0
Min
3.0
Typ
3.3
Max
3.6
0
+100
Unit
V
dBm
°C
Condition
1.
Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 3. Absolute Maximum Ratings
Symbol
V
DD
Parameter
Power Supply Voltage
Incident Optical Power
T
J
T
S
V
ESD
Junction Temperature
Storage Temperature
ESD Rating (Human Body Model)
–55
–55
Min
Typ
Max
6
+3
+125
+125
750
Unit
V
dBm
°C
°C
V
Condition
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliability of the device.
3 of 10
G52363, Rev 4.2
2/6/03
VSC7807
Data Sheet
B
ARE
D
IE AND
P
ACKAGE
I
NFORMATION
1481µm (58.3mils)
Pad 3
DOUTN
Pad 4
GND
Pad 5
GND
835µm
(32.9mils)
VSC7807
Top View
Pad 6
VDD
Pad 2
DOUTP
Pad 1
GND
835µm x 1481µm (32.9mils x 58.3mils)
635µm (26mils)
108µm x 108µm (4.3mils x 4.3mils)
244µm x 108µm (9.6mils x 4.3mils)
Pad Passivation Openings: 86µm x 86µm (3.4mils x 3.4mils)
223µm x 86µm (8.8mils x 3.4mils)
Scribe Size:
157µm (6.2mils)
Die Size:
Die Thickness:
Pad Sizes:
157µm
(6.2mils)
Figure 1. Pad Diagram for Bare Die (-X)
Table 4. Pad Coordinates for Bare Die (-X)
Pad
Number
1
2
3
4
5
6
Coordinates (µm)
X
55
55
780
780
596.7
244.2
Y
943.6
1093.6
1093.6
943.6
61.4
61.4
Description
Ground
Data output, true (with reference to incident light)
Data output, complement (with reference to incident light)
Ground
Ground
+3.3V Power Supply
Signal Name
GND
DOUTP
DOUTN
GND
GND
VDD
4 of 10
G52363, Rev 4.2
2/6/03
VSC7807
Data Sheet
BottomView
VDD
DOUTP
DOUTN
GND
Figure 2. Pin Diagram for TO-46 and TO-56 Packages
Table 5. Pin Identification for TO-46 and TO-56 Packages
Signal Name
DOUTP
DOUTN
VDD
GND
Description
Data output, true (with reference to incident light)
Data output, complement (with reference to incident light)
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