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CC5401

Description
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
File Size56KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet View All

CC5401 Overview

PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
CC5401
(9AW)
TO-92
BCE
MARKING : CC
5401
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VCEO
Collector -Emitter Voltage
VCBO
Collector -Base Voltage
VEBO
Emitter -Base Voltage
IC
Collector Current Continuous
PD
Power Dissipation @Ta=25 degC
Derate Above 25 deg C
PD
Power Dissipation @Tc=25 degC
Derate Above 25 deg C
Tj
Junction Temperature
Tstg
Storage Temperature
THERMAL RESISTANCE
Rth(j-c)
Junction to Case
Rth(j-a)
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCEO*
IC=1uA,IB=0
150
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
160
Collector -Base Voltage
VEBO
IE=10uA, IC=-0
5.0
Emitter -Base Voltage
ICBO
VCB=160V, IE=0
-
Collector-Cut off Current
Ta=100 deg C
VCB=160V, IE=0
VCE=150V, IB=0
VEB=4V, IC=0
IC=1mA,VCE=5V
IC=10mA,VCE=5V
IC=50mA,VCE=5V
VALUE
150
160
5.0
600
625
5.0
1.5
12
150
-55 to +150
83.3
200
TYP
-
-
-
-
MAX
-
-
-
50
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C
deg C/W
deg C/W
UNIT
V
V
V
nA
-
-
50
80
50
-
-
-
-
-
Emitter-Cut off Current
DC Current Gain
ICEO
IEBO
hFE*
50
1.0
50
-
320
-
uA
uA
nA
Continental Device India Limited
Data Sheet
Page 1 of 3
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