AN28F512-120 datasheet, PDF - EEWORLD Datasheet

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AN28F512-120: Description512K (64K x 8) CMOS FLASH MEMORY; Categorystorage storage; File Size1MB，24 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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AN28F512-120 Overview

512K (64K x 8) CMOS FLASH MEMORY

AN28F512-120 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Intel
Parts packaging code	QFJ
package instruction	0.450 X 0.550 INCH, PLASTIC, LCC-32
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	120 ns
Other features	BYTE PROGRAMMABLE; BULK ERASE
command user interface	YES
Data polling	NO
Durability	1000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	524288 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	11.43 mm
Base Number Matches	1

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AN28F512-120 Related Products

	AN28F512-120	AN28F512	AN28F512-150
Description	512K (64K x 8) CMOS FLASH MEMORY	512K (64K x 8) CMOS FLASH MEMORY	512K (64K x 8) CMOS FLASH MEMORY
Is it Rohs certified?	incompatible	-	incompatible
Maker	Intel	-	Intel
Parts packaging code	QFJ	-	QFJ
package instruction	0.450 X 0.550 INCH, PLASTIC, LCC-32	-	0.450 X 0.550 INCH, PLASTIC, LCC-32
Contacts	32	-	32
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
Maximum access time	120 ns	-	150 ns
Other features	BYTE PROGRAMMABLE; BULK ERASE	-	BYTE PROGRAMMABLE; BULK ERASE
command user interface	YES	-	YES
Data polling	NO	-	NO
Durability	1000 Write/Erase Cycles	-	1000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32	-	R-PQCC-J32
JESD-609 code	e0	-	e0
length	13.97 mm	-	13.97 mm
memory density	524288 bi	-	524288 bi
Memory IC Type	FLASH	-	FLASH
memory width	8	-	8
Number of functions	1	-	1
Number of terminals	32	-	32
word count	65536 words	-	65536 words
character code	64000	-	64000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	125 °C	-	125 °C
Minimum operating temperature	-40 °C	-	-40 °C
organize	64KX8	-	64KX8
Output characteristics	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	QCCJ	-	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6	-	LDCC32,.5X.6
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	CHIP CARRIER	-	CHIP CARRIER
Parallel/Serial	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
power supply	5 V	-	5 V
Programming voltage	12 V	-	12 V
Certification status	Not Qualified	-	Not Qualified
Maximum seat height	3.55 mm	-	3.55 mm
Maximum standby current	0.0001 A	-	0.0001 A
Maximum slew rate	0.03 mA	-	0.03 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V
surface mount	YES	-	YES
technology	CMOS	-	CMOS
Temperature level	AUTOMOTIVE	-	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	J BEND	-	J BEND
Terminal pitch	1.27 mm	-	1.27 mm
Terminal location	QUAD	-	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
switch bit	NO	-	NO
type	NOR TYPE	-	NOR TYPE
width	11.43 mm	-	11.43 mm
Base Number Matches	1	-	1

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