NCN6010
SIM Card Supply and
Level Shifter
The NCN6010 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller. A
built-in DC-DC converter makes the NCN6010 useable to drive any
type of SIM card. The device fulfills the GSM 11.11 specification. The
external MPU has an access to a dedicated input STOP pin, providing
a way to switch off the power applied to the SIM card in case of failure
or when the card is removed.
Features
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MARKING
DIAGRAM
14
1
TSSOP-14
DTB SUFFIX
CASE 948G
A
L
Y
W
G
NCN
6010
ALYWG
G
1
•
•
•
•
•
•
Supports 3.0 V or 5.0 V Operating SIM Card
Built-in Pull Up Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected, According to GSM Specification
Supports 10 MHz Clock
6.0 kV ESD Proof on SIM Card Pins
These are Pb-Free Devices**
Typical Applications
•
Cellular Phone SIM Interface
•
Identification Module
V
DD
C4
4.7
mF
1
2
3
P4
P3
P2
P1
P0
4
5
6
7
STOP
MOD_V
CC
PWR_ON
I/O
CLOCK
RESET
Ctb
SIM_IO
GND
SIM_CLK
SIM_RST
GND
9
8
4
C4
3
CLK
2
RST
1
GND V
CC
GND
9
DET
12
11
10
Cta
C2
220 nF
V
DD
SIM_V
CC
14
13
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
V
DD
1
C3
1
mF
STOP 2
MOD_VCC 3
PWR_ON 4
I/O 5
CLOCK 6
RESET 7
(Top View)
14 SIM_VCC
13 Cta
12 Ctb
11 SIM_IO
10 GND
9 SIM_CLK
8 SIM_RST
GND
V
CC
MPU or GSM Controller
ORDERING INFORMATION
Device
NCN6010DTB
NCN6010DTBG
NCN6010DTBR2
Package
TSSOP-14*
TSSOP-14*
Shipping
†
96 Units / Rail
96 Units / Rail
V
pp
DET
I/O
C8
TSSOP-14* 2500/Tape & Reel
8
7
6
5
10
NCN6010DTBR2G TSSOP-14* 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb-Free.
GND
Figure 1. Typical Interface Application
**For additional information on our Pb-Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 3
Publication Order Number:
NCN6010/D
NCN6010
STOP
2
ENABLE
14
SIM_V
CC
MOD_V
CC
3
3 V/5 V
13
Cta
POWER UNIT & LOGIC
MANAGEMENT
12
PWR_ON
V
CC
ENABLE
Ctb
PWR_ON
4
V
DD
1
CLOCK
6
9
SIM_CLK
GND
RESET
7
8
SIM_RST
V
DD
GND
V
CC
GND
20 k
I/O
I/O
5
DATA
I/O
GND
10
GND
GROUND
DATA
11
SIM_IO
Figure 2. NCN6010 Block Diagram
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2
20 k
NCN6010
PIN DESCRIPTIONS
Pin
1
Name
V
DD
Type
POWER
Description
This pin is connected to the system controller power supply suitable to operate from a
3.6 V typical battery. A low ESR ceramic capacitor (4.7
mF
typical) shall be used to bypass
the power supply voltage.
A Low level on this pin resets the SIM interface, switching off the SIM_VCC, according to
the ISO7816-3 Power Down procedure (See Table 1 and Figure 3).
The signal present on this pin programs the SIM_VCC value (See Table 1):
MOD_VCC = L
→
SIM_VCC = 5.0 V
MOD_VCC = H
→
SIM_VCC = 3.0 V
The signal present on this pin controls the SIM_VCC state (See Table 1):
PWR_ON = L
→
SIM_VCC = Open, no supply connected to the SIM card.
PWR_ON = H
→
SIM_VCC = Active, the card is powered.
This pin is connected to an external microcontroller or GSM management unit. A
bi-directional level translator adapts the serial I/O signal between the smart card and the
external controller. A built-in constant 20 kW (typical) resistor provides a high impedance
state when not activated.
The clock signal, coming from the external controller, must have a Duty Cycle within the
Min/Max values defined by the specification (typically 50%). The built-in level shifter
translates the input signal to the external SIM card CLK input.
The RESET signal present at this pin is connected to the SIM card. The internal level
shifter translates the level according to the voltages present at pin 1 and the SIM_VCC
programmed value.
This pin is connected to the RESET pin of the card connector. A level translator adapts the
external RESET signal to the SIM card. A built-in active pull down connects this pin to
ground when the device is in a nonoperating mode.
This pin is connected to the CLK pin of the card connector. The CLOCK signal comes from
the external clock generator, the internal level shifter being used to adapt the voltage
defined for the SIM_VCC. A built-in active pull down connects this pin to ground when the
device is in a nonoperating mode.
This pin is the GROUND reference for the integrated circuit and associated signals. Cares
must be observed to avoid voltage spikes when the device operates in a normal operation.
This pin handles the connection to the serial I/O of the card connector. A bi-directional
level translator adapts the serial I/O signal between the card and the microcontroller. A 20
kW (typical) pull up resistor provides a High impedance state for the SIM card I/O link.
POWER
POWER
POWER
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the SIM card power supply pin. An internal Charge Pump
converter is programmable by the external MPU to supply either 3.0 V or 5.0 V output
voltage. An external 1.0
mF
minimum ceramic capacitor (ESR
t
100 mW, X5R or X7R
recommended) must be connected across SIM_VCC and GND.
During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a 5.0 V
value, or can start directly to any of these two values. When the voltage is adjusted
downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak current can flow
from the external capacitors to the battery during a short amount of time (in the 1.0
ms
range). When such a voltage adjustment is necessary, it is recommended to force
SIM_VCC to zero, wait 350
ms
minimum, then reprogram the chip to get SIM_VCC = 3.0 V.
2
3
STOP
MOD_V
CC
INPUT
INPUT
4
PWR_ON
INPUT
5
I/O
INPUT
6
CLOCK
INPUT
7
RESET
INPUT
8
SIM_RST
OUTPUT
9
SIM_CLK
OUTPUT
10
11
GND
SIM_I/O
GROUND
12
13
14
Cta
Ctb
SIM_VCC
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3
NCN6010
MAXIMUM RATINGS
(Note 1)
Rating
Power Supply
External Card Power Supply and Level Shifter
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Output Voltage
Digital Output Current
Digital Input/Output Voltage
Digital Input/Output Current
Digital Output Voltage
Digital Output Current
Human Body Model: R = 1500
W,
C = 100 pF
SIM card side, pins 8, 9, 11 & 14
All other pins
TSSOP-14 Package
Power Dissipation @ T
A
= +85°C
Thermal Resistance, Junction-to-Air
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
DD
SIM_VCC
STOP
RESET
CLOCK
I/O
SIM_RST
SIM_I/O
SIM_CLK
ESD
6.0
2.0
P
D
R
THhja
T
A
T
J
T
Jmax
T
stg
275
145
-25 to +85
-25 to +125
+150
-65 to +150
kV
kV
mW
°C/W
°C
°C
°C
°C
Value
7.0
7.0
-0.3
v
V
v
V
DD
1.0
-0.3
v
V
v
V
DD
1.0
-0.3
v
V
v
V
DD
1.0
-0.3
v
V
v
V
DD
1.0
-0.3
v
V
v
SIM_VCC
25
-0.3
v
V
v
SIM_VCC
25
-0.3
v
V
v
SIM_VCC
50
Unit
V
V
V
mA
V
mA
V
mA
V
mA
V
mA
V
mA
V
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= +25°C.
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4
NCN6010
POWER SUPPLY SECTION
(-25
5C
to +855C)
Rating
Power Supply
Standby Supply Current @ No Input Clock, All Input
Logic to H, No Load Connected to the SIM Interface.
Ground Current, @ V
DD
= 3.0 V, Operating Conditions:
PWR_ON = 0
SIM_VCC = 5.0 V, I
CC
= 0 mA
SIM_VCC = 5.0 V, I
CC
= 10 mA (Note 2)
SIM_VCC = 3.0 V, I
CC
= 0 mA
SIM_VCC = 3.0 V, I
CC
= 6.0 mA (Note 2)
External Card Power Supply at 5.0 V
@ 2.7 V
v
V
DD
v
3.6 V, I
CC
= 10 mA
External Card Power Supply at 3.0 V
@ 2.7 V
v
V
DD
v
3.6 V, I
CC
= 10 mA
Output SIM Card Supply Voltage Turn On Time
Ct = 220 nF, Cout1 = 1.0
mF
"20%
V
DD
= 3.0 V, SIM_VCC = 5.0 V
V
DD
= 3.0 V, SIM_VCC = 3.0 V
Output SIM Card Supply Voltage Turn Off Time
Ct = 220 nF, Cout1 = 1.0
mF
"20%
(Note 3)
V
DD
= 2.7 V, SIM_VCC = 5.0 V, @ V
LOW
= 0.4 V
V
DD
= 2.7 V, SIM_VCC = 3.0 V, @ V
LOW
= 0.4 V
Output Voltage Ripple (Note 4)
Ct = 220 nF, Cout1 = 1.0
mF,
Cout2 = 100 nF
V
DD
= 3.0 V, SIM_VCC = 5.0 V, I
CC
= 10 mA
(Not Relevant at SIM_VCC = 3.0 V)
Input Peak Current During DC-DC Startup
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
Input Average Current During Normal Operation,
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
DC-DC Internal Oscillator
Symbol
V
DD
I V
DD
I V
DD
Pin
1
1
1
Min
2.7
-
-
5.0
125
200
25
40
SIM_VCC
14
4.5
V
DD
- 50 mV
VCC
TON
14
-
1.0
0.5
VCC
TOFF
14
-
-
300
300
VCC
RIP
14
-
-
200
I
DDpk
I
DDavg
Fosc
1
1
-
-
-
-
300
20
800
-
-
-
mA
mA
kHz
mV
ms
V
DD
- 25 mV
5.5
V
DD
ms
V
Typ
-
500
Max
3.6
-
Unit
V
nA
mA
2. The I
DD
current represents the absolute difference between the current absorbed by the load and the one absorbed by the chip.
3. A 350
ms
delay must be observed by the external MPU prior to reactivate the SIM_VCC output.
4. Using low ESR capacitors type (max 100 mW) is mandatory for Ct, Cout1 and Cout2 to reach the NCN6010 specifications. Ceramic type
(X5R or X7R) are recommended.
DIGITAL INPUT SECTION CLOCK, RESET, I/O, STOP, MOD_VCC, PWR_ON
Rating
High Level Input Voltage
Low Level Input Voltage
Input Rise Time
Input Fall Time
Input Capacitance
Input @ 45% < Duty Cycle < 55%
Clock Rise Time
Clock Fall Time
Input Clock Capacitance
Input/Output Data Transfer Frequency
I/O Rise Time
I/O Fall Time
Input I/O Capacitance
Symbol
V
IH
V
IL
tr
tf
Cin
CLOCK
Pin
2, 3
4, 5
6, 7
Min
0.7 * V
DD
Typ
-
Max
V
DD
0.3 * V
DD
50
50
10
5.0
50
50
10
160
0.8
0.8
10
Unit
V
V
ns
ns
pF
MHz
ns
ns
pF
kHz
ms
ms
pF
6
-
-
I/O
5
-
15
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