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SI1907DL-T1-E3

Description
MOSFET DUAL P-CH 1.8V (G-S) TRENCH
CategoryDiscrete semiconductor    The transistor   
File Size117KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI1907DL-T1-E3 Overview

MOSFET DUAL P-CH 1.8V (G-S) TRENCH

SI1907DL-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)0.53 A
Maximum drain-source on-resistance0.65 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)888 pF
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Si1907DL
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.650 at V
GS
= - 4.5 V
- 12
0.925 at V
GS
= - 2.5 V
1.310 at V
GS
= - 1.8 V
I
D
(A)
± 0.56
± 0.47
± 0.39
FEATURES
• TrenchFET
®
Power MOSFETS: 1.8 V Rated
Pb-free
Available
RoHS*
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
M a r k
Code
Marking
in g C o d e
P A X
X
QC
YY
YY
Lot Traceability
LotT
and Date Code
Part # Code
G
1
2
5
G
2
D
2
3
4
S
2
Top View
Ordering Information:
Si1907DL-T1
Si1907DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 0.25
0.30
0.16
- 55 to 150
± 0.56
± 0.40
± 1.0
- 0.23
0.27
0.14
W
°C
5 sec
- 12
±8
± 0.53
± 0.38
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply
t
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
360
400
300
Maximum
415
460
350
°C/W
Unit
Document Number: 71083
S-62689–Rev. C, 01-Jan-07
www.vishay.com
1

SI1907DL-T1-E3 Related Products

SI1907DL-T1-E3 SI1907DL-T1
Description MOSFET DUAL P-CH 1.8V (G-S) TRENCH MOSFET 12V 0.56A
Is it lead-free? Lead free Contains lead
Maker Vishay Vishay
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (ID) 0.53 A 0.53 A
Maximum drain-source on-resistance 0.65 Ω 0.65 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 888 pF 888 pF
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e0
Number of components 2 2
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
Transistor component materials SILICON SILICON

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