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RN1119MFVTPL3

Description
Bipolar Transistors - Pre-Biased Bias Resistor
Categorysemiconductor    Discrete semiconductor   
File Size163KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Bipolar Transistors - Pre-Biased Bias Resistor

RN1119MFVTPL3 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
ConfigurationSingle
Transistor PolarityNPN
Typical Input Resistor1 kOhms
Mounting StyleSMD/SMT
Package / CaseSOT-723
DC Collector/Base Gain hfe Min120
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Pd - Power Dissipation150 mW
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
Collector- Base Voltage VCBO50 V
DC Current Gain hFE Max700
Emitter- Base Voltage VEBO5 V
Height0.5 mm
Length1.2 mm
Operating Temperature Range- 65 C to + 150 C
TypeNPN Epitaxial Silicon Transistor
Width0.8 mm
Factory Pack Quantity8000
RN1119MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1119MFV
0.8±0.05
0.32±0.05
0.45
0.4
0.4
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.2±0.05
0.8±0.05
Unit: mm
0.22±0.05
0.4
1
2
3
0.4
1.2±0.05
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit
0.5±0.05
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
50
50
5
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
1.15
0.4
0.5
0.45
Land Pattern Example
Unit: mm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1
:
Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mmt)
Start of commercial production
2005-09
1
2014-03-01
0.13±0.05
Complementary to RN2119MFV

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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