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2SC5947

Description
Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP-FD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size33KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SC5947 Overview

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP-FD, 3 PIN

2SC5947 Parametric

Parameter NameAttribute value
Objectid2023864585
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)7 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)17 MHz
Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Features
Package Dimensions
unit : mm
2069C
[2SC5947]
0.8
High breakdown voltage.
High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
10.2
4.5
1.3
9.9
1.5max
8.8
3.0
2.55
1.2
2.55
1.35
1
0.8
2
3
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, Duty cycle≤10%
Tc=25°C
Conditions
2.55
2.55
2.7
Ratings
700
700
400
8
7
14
1.65
45
150
--55 to +150
1.4
Unit
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Conditions
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004KB TS IM TA-101157 No.7787-1/4
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