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BUK7212-55B118

Description
MOSFET HIGH PERF TRENCHMOS
Categorysemiconductor    Discrete semiconductor   
File Size769KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET HIGH PERF TRENCHMOS

BUK7212-55B118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current83 A
Rds On - Drain-Source Resistance12 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 185 C
ConfigurationSingle
Pd - Power Dissipation167 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.38 mm
Length6.73 mm
Transistor Type1 N-Channel
Width6.22 mm
Fall Time45 ns
Rise Time91 ns
Factory Pack Quantity2500
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time18 ns
Unit Weight0.139332 oz
BUK7212-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 23 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
185 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
75
167
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 9;
see
Figure 10
-
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