The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 5 March 2008.
INCH-POUND
MIL-PRF-19500/737A
5 December 2007
SUPERSEDING
MIL-PRF-19500/737
13 November 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,
TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier
diodes for use in high frequency switching applications. Four levels of product assurance are provided for each
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (U1), and figure 3 (TO-257AA).
1.3 Maximum ratings. Unless otherwise specified, maximum ratings (TC = +25°C).
Column 1
Column 2
VRWM
Column 3
IO (1)(2)
TC =
+100°C
A dc
35
35
16
Column 4
IFSM (2)
tp = 8.3 ms,
TC = +25°C
A (pk)
180
200
120
Column 5
R
ΘJC
(2) (3)
°C/W
1.9
1.67
1.85
Column 6
TSTG
and
TJ
°C
-65 to
+150
Types
V dc
1N7039CCT1
1N7039CCU1
1N7047CCT3
150
150
150
(1) See temperature-current derating curves in figures 4, 5, and 6.
(2) Each leg
(3) See figures 7, 8, and 9.
1.4 Primary electrical characteristics at T = +25°C, unless otherwise indicated.
A
R
ΘJC
= 0.95
°C/W
maximum for entire package for 1N7039CCT1; R
ΘJA
= 40°C/W maximum, for each leg;
RΘJC = 0.83
°C/W
maximum for entire package for 1N7039CCU1; R
ΘJC
= 0.95
°C/W
maximum for entire
package for 1N7047CCT3.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/737A
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, and 3 herein. Methods used for electrical isolation of the terminal feedthroughs
for the TO-254 or TO-257 packages shall employ materials that contain a minimum of 90 percent Al2O3 (ceramic).
3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figures 1 and 2 herein.
3.4.2 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-STD-750,
MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document
(see 6.2). When lead formation is performed on TO-254 or TO-257 leads, as a minimum, the vendor shall perform
100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in
accordance with table I, subgroup 2 herein.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.
5
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