NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., G
a
= 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG2031M16
Order Number
NESG2031M16-A
Package
6-pin lead-less minimold
(M16, 1208 PKG)
NESG2031M16-T3
NESG2031M16-T3-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
35
175
150
65
to +150
Unit
V
V
V
mA
mW
C
C
T
j
T
stg
Note
Mounted on 1.08 cm
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2031M16
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
f
T
½S
21e
½
NF
NF
G
a
G
a
C
re
Note 2
Note
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
130
190
100
100
260
nA
nA
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
20
16.0
15.0
19.0
25
18.0
0.8
1.3
17.0
10.0
0.15
21.5
1.1
0.25
GHz
dB
dB
dB
dB
dB
pF
dB
MSG
3
Gain 1 dB Compression Output Power
P
O (1 dB)
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
13
dBm
Output 3rd Order Intercept Point
OIP
3
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
23
dBm
Notes 1.
Pulse measurement: PW
350
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
<R>
Rank
Marking
h
FE
Value
FB/YFB
zF
130 to 260
2
Data Sheet PU10394EJ03V0DS
NESG2031M16
<R>
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
3
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