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BD540B-S

Description
Bipolar Transistors - BJT 80V 5A PNP
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BD540B-S Overview

Bipolar Transistors - BJT 80V 5A PNP

BD540B-S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD539 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD540
Collector-base voltage (I
E
= 0)
BD540A
BD540B
BD540C
BD540
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD540A
BD540B
BD540C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD540B-S Related Products

BD540B-S BD540 BD540A-S BD540C
Description Bipolar Transistors - BJT 80V 5A PNP Bipolar Transistors - BJT 45W PNP Silicon Bipolar Transistors - BJT 60V 5A PNP Bipolar Transistors - BJT 45W PNP Silicon
Is it lead-free? Lead free Contains lead Lead free Contains lead
Is it Rohs certified? conform to incompatible conform to incompatible
Maker Bourns Bourns Bourns Bourns
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code not_compliant compliant not_compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 80 V 40 V 60 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 12 12 12 12
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 45 W 45 W 45 W 45 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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