TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Licensed by
ON Semiconductor
,
A trademark of
semiconductor
Components Industries, LLC for
Zener Technology
and
Products
.
Maximum Ratings
(Note 1)
Rating
Maximum Steady State Power Dissipation
@TL≤75℃,
Lead Length = 3/8”
Derate Above 75℃
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
-65 to +200
Units
mW
mW/℃
°C
AXIAL LEAD
DO35
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 2.4V to 12V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Cathode
Anode
Specification Features:
Case
:
Double slug type, hermetically sealed glass
Finish
:
All external surfaces are corrosion resistant and leads are readily solderable
Polarity :
Cathode indicated by polarity band
Mounting:
Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
L
437xA
L
43
7x
A
= Logo
= 1N437xA Device Code
L
Ordering Information
Device
1NxxxxA
1NxxxxARL
1NxxxxARL2*
1NxxxxARR1 !
1NxxxxARR2 i
1NxxxxATA
1NxxxxATA2*
1NxxxxARA1 !
1NxxxxARA2 i
Package
Axial Lead
Axial Lead
Axial Lead
Lead Form
Lead Form
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Quantity
3000 Units / Box
5000 Units / Tape & Reel
5000 Units / Tape & Reel
3000 Units / Radial Tape & Reel
3000 Units / Radial Tape & Reel
5000 Units / Tape & Ammo
5000 Units / Tape & Ammo
3000 Units / Radial Tape & Ammo
3000 Units / Radial Tape & Ammo
L
7xxA
7x
xA
= Logo
= 1N7xxA Device Code
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band
up
with cathode lead off first.
i “2”: Polarity band
down
with cathode lead off first.
Devices listed in
bold italic
are Tak Cheong
Preferred
devices.
Preferred
devices are recommended choices
for future use and best overall value.
December 2005 / B
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1
1N4370A through 1N759A Series
®
1N4370A through 1N759A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 200mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZM
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Zener Current
Maximum Zener Impedance @ I
ZT
Maximum DC Zener Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200mA for all types)
Zener Voltage
(Note 3.)
Device
(Note 2.)
Z
ZT
(Note 4.)
@ I
ZT
@ I
ZT
(Ω)
Ω
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
30
I
ZM
(Note 5.)
(mA)
150
135
120
110
100
95
85
75
70
65
60
55
50
45
40
35
30
I
R
@ V
R
= 1V
T
A
= 25ºC
(µA)
µ
100
75
50
10
10
10
2
2
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
A
= 150ºC
(µA)
µ
200
150
100
30
30
30
30
30
20
20
20
20
20
20
20
20
20
Device
Marking
1N4370A
1N4271A
1N4372A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1N753A
1N754A
1N755A
1N756A
1N757A
1N758A
1N759A
V
Z
(Volts)
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
11.4
Nom
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
12
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.5
12.6
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
1N4370A
1N4271A
1N4372A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1N753A
1N754A
1N755A
1N756A
1N757A
1N758A
1N759A
2. TOLERANCE AND TYPE NUMBER DESIGNATION (V
Z
)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
3. ZENER VOLTAGE (V
Z
) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±1°C
and 3/8” lead length.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for I
Z(AC)
= 0.1 I
Z(DC)
with AC frequency = 60Hz.
5. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
Values shown are based on the JEDEC rating of 400mW where the actual zener voltage (V
Z
) is known at the operating
point, the zener current may be increased and is limited by the derating curve.
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2
1N4370A through 1N759A Series
0.7
HEAT
SINKS
0.6
P D , MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
0.5
0.4
3/8"
3/8"
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
T L , LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
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3
1N4370A through 1N759A Series
APPLICATION NOTE - ZENER VOLTAGE
θ
JL, JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
300
L
2.4-60 V
200
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
62-200 V
100
0
0
0.2
0.4
0.6
0.8
1
L , LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT (
µ
A)
20
10
7
5
2
1
0.7
0.5
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
14
15
+25°C
Figure 3. Typical Leakage Current
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4
1N4370A through 1N759A Series
(-55
°C
to +150
°C
temperature range; 90% of the units are in the ranges indicated.)
TEMPERA TURE COEFFICIENT (mV/
°
C)
+12
TEMPERATURE COEFFICIENT (mV/
°
C)
+10
+8
+6
+4
+2
RANGE
0
-2
-4
2
3
4
5
6
7
8
9
10
11
12
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
@ I
ZT
(NOTE 2)
100
70
50
30
20
RANGE
V
Z
@ I
Z
(NOTE 2)
TEMPERATURE COEFFICIENTS
10
7
5
3
2
1
10
20
θ
VZ
,
θ
VZ
,
30
50
70
100
V
Z
, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts
Figure 4b. Range for Units 12 to 100 Volts
TEMPERA TURE COEFFICIENT (mV/
°
C)
TEMPERATURE COEFFICIENT (mV/
°
C)
200
+6
V
Z
@ I
Z
TA= 25
°C
180
+4
160
+2
20mA
0
0.01mA
1mA
-2
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOL TS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
AFFECT TEMPERATURE COEFFICIENTS
3
4
5
6
7
8
140
120
V
Z
@ I
ZT
(NOTE 2)
θ
VZ ,
θ
VZ
,
120
130
140
150
160
170
180
190
200
100
-4
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts
Figure 5. Effect of Zener Current
1000
500
0V BIAS
200
C, CAP ACIT ANCE (pF)
100
T
A
= 25
°
C
100
70
50
0 BIAS
C, CAP ACIT ANCE (pF)
30
20
1 VOLT BIAS
10
7
5
3
2
1
50% OF V BIAS
T= 25
°C
1V BIAS
50
20
10
5
2
1
1
2
5
10
20
50
100
V
Z,
ZENER VOLTAGE (VOLTS)
50% OF
V
Z
BIAS
120
140
160
180
190
200
220
V Z, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4-100 Volts
Figure 6b. Typical Capacitance 120-200 Volts
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Embedded System
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