STD70NH02L
STD70NH02L-1
N-channel 24V - 0.0062Ω - 60A - DPAK/IPAK
STripFET™ II Power MOSFET
General features
Type
STD70NH02L-1
STD70NH02L
V
DSS
24V
24V
R
DS(on)
<0.008Ω
<0.008Ω
I
D
60A
(1)
60A
(1)
1. Value limited by wire bonding
■
■
■
■
3
1
DPAK
R
DS(ON)
* Q
g
industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
Description
The device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
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Order codes
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Internal schematic diagram
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Switching application
Part number
Marking
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
STD70NH02LT4
STD70NH02L-1
D70NH02L
D70NH02L
July 2006
Rev 5
1/16
www.st.com
16
Contents
STD70NH02L - STD70NH02L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
7
Test circuit
................................................ 9
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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2/16
STD70NH02L - STD70NH02L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
spike (1)
V
DS
V
DGR
V
GS
I
D (2)
I
D
I
DM (3)
P
TOT
E
AS (4)
T
j
T
stg
Absolute maximum ratings
Parameter
Drain-source voltage rating
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at
T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Value
30
24
24
± 20
60
50
240
70
Unit
V
V
V
V
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1. Guaranted when external Rg= 4.7Ω and Tf<Tfmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area
4. Starting Tj =25°C, Id = 30A, Vdd = 15V
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W
W/°C
mJ
°C
Table 2.
Thermal data
Rthj-case
Rthj-amb
T
J
Thermal resistance junction-case max
2.14
100
275
°C/W
°C/W
°C
Thermal resistance junction-to ambient max
Maximum lead temperature for soldering purpose
3/16
Electrical characteristics
STD70NH02L - STD70NH02L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 25mA, V
GS
=0
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
V
GS
= 5V, I
D
= 15A
1
Min.
24
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
1.8
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward
transconductance
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V
DS
= 10V, I
D
= 18A
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DS
= 25V, f = 1MHz,
V
GS
= 0
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 10V, I
D
= 40A
R
G
= 4.7Ω V
GS
= 4.5V
(see
Figure 13)
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
V
DD
= 5V, I
D
= 60A,
V
GS
= 10V, R
G
= 4.7Ω
(see
Figure 14)
Q
oss(2)
V
DS
=10V, V
GS
=0V
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
R
G
Gate input resistance
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Q
oss.
= C
oss
*
∆
Vin, C
oss
= C
gd
+ C
gd.
See
Chapter 4: Appendix A
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Test conditions
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Typ.
27
2050
545
70
12
200
18
25
17
7.7
3.5
14
ct
u
0.008
0.014
s)
(
S
Ω
Ω
Max.
Unit
pF
pF
pF
ns
ns
ns
ns
22
nC
nC
nC
nC
1
Ω
4/16
STD70NH02L - STD70NH02L-1
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 30A, V
GS
= 0
36
35
3.6
Test conditions
Min.
Typ.
Max.
60
240
1.3
Unit
A
A
V
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 60A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 15V, T
j
= 150°C
Reverse recovery current (see
Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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5/16
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