AO8830 datasheet, PDF - EEWORLD Datasheet

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AO8830: DescriptionCommon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size111KB，4 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about

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AO8830 Overview

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8830 Parametric

Parameter Name	Attribute value
Maker	Alpha & Omega Semiconductor
package instruction	,
Reach Compliance Code	compli

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AO8830

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO8830 uses advanced trench technology to

provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V

GS(MAX)

rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-

drain configuration.

Standard Product AO8830 is Pb-

free (meets ROHS & Sony 259 specifications).

AO8830L is a Green Product ordering option.

AO8830 and AO8830L are electrically identical.

Features

(V) = 20V

= 6 A (V

= 10V)

DS(ON)

< 27mΩ (V

= 10V)

DS(ON)

< 30mΩ (V

= 4.5V)

DS(ON)

< 41mΩ (V

= 2.5V)

DS(ON)

< 55mΩ (V

= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

1.6KΩ

Absolute Maximum Ratings T

=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Power Dissipation

Maximum

±12

4.8

1.5

0.94

-55 to 150

Units

=25°C

=70°C

=25°C

=70°C

, T

STG

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Symbol

≤

10s

Steady-State

θJA

θJL

Typ

115

Max

140

Units

°C/W

Alpha & Omega Semiconductor, Ltd.

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