Features
•
•
•
•
•
•
•
Frequency Range 4.9 GHz to 5.9 GHz
Supply-voltage 2.7 V to 3.6 V
2.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM
26.5 dB P
1dB
On-chip Power Detector with 20 dB Dynamic Range
Power-down Mode and Biasing Control
Low Profile Lead-free Plastic Package QFN16 (4
´
4
´
0.9 mm)
Applications
•
•
•
•
IEEE 802.11a OFDM WLAN
Hiperlan2 WLAN
PC Cards, PCMCIA
5 GHz ISM Band Application
5-GHz WLAN
Power Amplifier
for 802.11a
ATR3515
Preliminary
Electrostatic sensitive device.
Observe precautions for handling.
Description
Process
The 5-GHz power amplifier is designed in Atmel’s advanced Silicon-Germanium
(SiGe) process and provides excellent linearity and noise performance as well as
good power-added efficiency.
Circuitry
The PA consists of a two-stage amplifier with a P
1db
of 26 dBm. The output stage was
realized using an open-collector structure. Power-up/down and output level are con-
trolled at bias control pin 6 (VCTL). An on-chip power detector provides a voltage
proportional to the output power.
Figure 1.
Block Diagram
VCC1
15
VCC2
13
ATR3515
RFIN
3
Matching
RFOUT
11
RFOUT
10
Bias control
Power
Detector
6
VCTL
16
VCC_CTL
7
VDET_OUT
Rev. 4514H–WLAN–12/03
Pin Configuration
Figure 2.
Pinning QFN16
VCC_CTL
VCC1
GND
VCC2
GND
NC
RFIN
GND
16 15 14 13
12 GND
1
2
ATR3515
11 RFOUT
3
GND on the
10 RFOUT
Paddel
9 GND
4
5 6 7 8
GND
VCTL
VDET_OUT
GND
Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Paddel
Symbol
GND
NC
RFIN
GND
GND
VCTL
VDET_OUT
GND
GND
RFOUT
RFOUT
GND
VCC2
GND
VCC1
VCC_CTL
–
Function
Ground
Not connected
RF input
Ground
Ground
Power-up/biasing control voltage
Power detector output voltage
Ground
Ground
RF output
RF output
Ground
Supply voltage for PA stage
Ground
Supply voltage for driver stage
Supply voltage for biasing control
Ground
2
ATR3515 [Preliminary]
4514H–WLAN–12/03
ATR3515 [Preliminary]
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Supply current
Junction temperature
Storage temperature
Input RF power
Control voltage power up/down and biasing
Note:
Pin
Symbol
V
CC
I
CC
T
j
T
Stg
P
IN
V
CTL
Value
3.8
800
150
-40 to +125
12
0 to 2.0
Unit
V
mA
°C
°C
dBm
V
The part may not survive all maximums applied simultaneously.
Operating Range
Parameters
Supply voltage range
Ambient temperature range
Symbol
V
CC
T
amb
Value
2.7 to 3.6
-25 to +75
Unit
V
°C
Electrical Characteristics
No.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Parameters
Supply voltage
Frequency range
Control voltage range
Control current
Current consumption
Current consumption
PA operating mode
Power down mode
PA Operation
Quiescent
Power down mode
ON is the time that ICC
returns to normal and
OFF is the time the
current needs to
decrease to 10% of
normal mode
With external matching
At ±11 MHz offset from
carrier
Spectrum mask
(1)
At ±20 MHz offset from
carrier
At ±30 MHz offset from
carrier
Test Conditions
Pin
Symbol
V
CC
f
V
CTL
V
CTL
I
CTL
Icq
Ipd
180
10
Min.
2.7
4.9
1.3
Typ.
3.3
Max.
3.6
5.9
1.9
0.2
200
Unit
V
GHz
V
V
µA
mA
µA
Type*
A
A
A
A
A
A
A
1.7
Turn on/off time
t
on/off
0.5
0.6
µs
C
1.8
1.9
1.10
1.11
Input and output return
loss
-12
-8
-22
-30
-42
dB
dBr
dBr
dBr
C
B
B
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. OFDM signal according to 802.11a specification with P
out
= 21 dBm at 54 Mbps.
3
4514H–WLAN–12/03
Electrical Characteristics - Unmodulated Carrier
Test Conditions (unless otherwise stated): V
CC
= 3.3 V, Frequency = 5.25 GHz, T
amb
= 25°C
No.
2.0
2.1
2.3
2.4
2.5
Parameters
P1dB output power
Small signal gain
Gain deviation
Reverse isolation
Icq = 180 mA, small
signal condition
Within 200 Mhz
frequency band
Test Conditions
Pin
Symbol
Psat
P1dB
GL
Gd
ISOr
-1
30
36
Min.
Typ.
28
26.5
18
+1
Max.
Unit
dBm
dBm
dB
dB
dB
Type*
A
A
A
A
C
Saturated output power For reference
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Electrical Characteristics - 54 Mbps OFDM-modulation
Test Conditions (unless otherwise stated): V
CC
= 3.3 V, Frequency = 5.25 GHz, T
amb
= 25°C, IEEE802.11a conform 54 Mbps OFDM
modulation, EVM measurement equipement noise floor included in EVM measurement result .
No.
3.0
3.1
3.2
Parameters
Linear power gain
Current consumption
Test Conditions
P
OUT
= 19 dBm
P
OUT
= 19 dBm
Pin
Symbol
EVM
GL
I
CC
Min.
Typ.
2.5
20
240
Max.
Unit
%
dB
mA
Type*
C
C
A
Error vector magnitude P
OUT
= 19 dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Electrical Characteristics - Power Detector
Test Conditions (unless otherwise stated): V
CC
= 3.3 V, Frequency = 5.25 GHz, T
amb
= 25°C.
No.
4.0
4.2
Parameters
Settling time
Test Conditions
Pin
Symbol
V
DET
tset
Min.
0
0.5
Typ.
Max.
2.4
Unit
V
µs
Type*
A
C
Detector voltage range P
OUT
= 2 to 28 dBm
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR3515 [Preliminary]
4514H–WLAN–12/03
ATR3515 [Preliminary]
Figure 3.
Application Circuit
VCC_CTL
VCC1
VCC2
*
Output
Input
*
ATR3515
*
* microstrip line
VCTL
VDET_OUT
5
4514H–WLAN–12/03
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