DIM400DDM17-A000 datasheet, PDF

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DIM400DDM17-A000: DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; CategoryDiscrete semiconductor The transistor; File Size143KB，10 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/; Environmental Compliance

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DIM400DDM17-A000 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN

DIM400DDM17-A000 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Dynex
package instruction	FLANGE MOUNT, R-PUFM-X10
Contacts	10
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	400 A
Collector-emitter maximum voltage	1700 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X10
Number of components	2
Number of terminals	10
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3470 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	1530 ns
Nominal on time (ton)	650 ns
VCEsat-Max	3.2 V
Base Number Matches	1

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DIM400DDM17-A000

Dual Switch IGBT Module

Replaces September 2001, version DS5449-2.3

DS5449-3.0 March 2002

FEATURES

10µs Short Circuit Withstand

High Thermal Cycling Capability

Non Punch Through Silicon

Isolated MMC Base with AlN Substrates

KEY PARAMETERS

CES

(typ)

CE(sat)

(max)

C(PK)

1700V

2.7V

400A

800A

*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

Inverters

Motor Controllers

Traction Drives

5(E

)

1(E1)

2(C2)

12(C

)

6(G

)

11(G

)

The Powerline range of modules includes half bridge,

chopper, dual and single switch configurations covering voltages

from 600V to 3300V and currents up to 2400A.

The DIM400DDM17-A000 is a dual switch 1700V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand. This module is

optimised for traction drives and other applications requiring high

thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

7(C

)

3(C1)

10(E

)

4(E2)

Fig. 1 Dual switch circuit diagram

ORDERING INFORMATION

Order As:

DIM400DDM17-A000

Note: When ordering, please use the whole part number.

Outline type code:

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

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