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IRFM210A

Description
Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
CategoryDiscrete semiconductor    The transistor   
File Size265KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

IRFM210A Overview

Advanced Power MOSFET (200V, 1.5ohm, 0.77A)

IRFM210A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)0.77 A
Maximum drain current (ID)0.77 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= 200V
Low R
DS(ON)
: 1.169
(Typ.)
IRFM210A
BV
DSS
= 200 V
R
DS(on)
= 1.5
I
D
= 0.77 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
o
C )
Continuous Drain Current (T
A
=70 C )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C ) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
Value
200
0.77
0.61
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
o
6
+ 30
_
40
0.77
0.2
5.0
2
0.016
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θ
JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
61
Units
o
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
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