Ordering number : ENA1446
TN5D01A
SANYO Semiconductors
DATA SHEET
TN5D01A
Features
•
•
•
•
•
•
ExPD (Excellent-Performance Power & RF Device)
Separately-Excited Step-Down
Switching Regulator
(Variable Output Type)
High efficiency (ON resistance 100m
Ω
, Vertical-type P-ch Power MOSFET).
Over current protection function (Self recovery type).
Under voltage protection function.
Over temperature protection function (Self recovery type).
Soft start function (Variable subject to externally-connected capacitor).
Stand-by mode function (Compatible with soft start terminal).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Maximum Input Voltage
Maximum Output Current
Drain-to-Source Voltage of built-in MOSFET
Drain Current of built-in MOSFET (DC)
Drain Current of built-in MOSFET (Pulse)
FB Pin Maximum Input Voltage
SS Pin Maximum Input Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
Symbol
VIN max
IO max
VDSS
ID
IDP
Vfb
VSS
PD
Topr
Tj
Tstg
Tc=25°C
PW≤10μs, duty cycle≤1%
Conditions
Ratings
57
5
--60
-
-9
-
-36
5
7
2.0
15
--25 to +125
150
--55 to +150
Unit
V
A
V
A
A
V
V
W
W
°C
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
71509IQ TK IM TC-00002025 No. A1446-1/11
TN5D01A
Recommended Operating Conditions
Parameter
Input Voltage
Output Voltage
Output Current
Operating Temperature Range
Symbol
VIN
VOUT
IOUT
Topr rec
Ta=25°C
Ta=25°C, VOUT / VIN
≥
0.1
Ta=25°C
Conditions
Ratings
10 to 30
2.7 to 4.9
0 to 5
-
-10 to + 85
Unit
V
V
A
°C
Electrical Characteristics
at Ta=25°C, See Specified Test Circuit (VOUT=3.3V)
Parameter
Reference Voltage
Efficiency
Drain-to-Source Breakdown Voltage
of built-in MOSFET
Drain-to-Source On Resistance
of built-in MOSFET
Switching Frequency
Maximum Duty
Line Regulation
Load Regulation
Output Voltage Temperature Coefficient *1
Over-Current-Protection-Operation
-Threshold Current
Under-Voltage-Protection-Operation
-Threshold Voltage
Under-Voltage-Protection-Operation
-Release Voltage
Under-Voltage-Protection Hysteresis Voltage
Over-Temperature-Protection-Operation
-Threshold-Temperature *1
Over-Temperature-Protection-Operation
-Release Temperature *1
Over-Temperature-Protection-Operation
-Hysteresis Temperature *1
SS Terminal Current
Standby Operating Voltage
Standby Current
Symbol
VFB
η
V(BR)DSS
RDS(on)
Freq
Duty max
ΔVline
ΔVload
ΔV
O/ΔTa
Iocp
Vuvlo on
Vuvlo off
Vuvlo hys
Ttsd on
Ttsd off
Ttsd hys
ISS
Vstb on
Istb
VIN=20V
VIN=20V
VIN=20V, VSS=0V
Conditions
VIN=20V, IOUT=3A
VIN=20V, IOUT=3A
ID=--1mA, VIN, GND, Vfb, VSS=0V
ISW=5A
VIN=20V, IOUT=3A
VIN=20V, Vfb=0V
VIN=10 to 30V, IOUT=3A
VIN=20V, IOUT=0.5 to 5A
VIN=20V, IOUT=3A, Ta=--25 to 125°C
VIN=20V
5.1
7.2
8.1
120
88
Ratings
min
1.12
typ
1.15
82
--60
100
150
92
30
35
±0.33
7.5
8.0
9.0
1.0
165
140
25
10
0.3
500
10
8.8
9.9
180
96
60
60
max
1.18
Unit
V
%
V
mΩ
kHz
%
mV
mV
mV
/ °C
A
V
V
V
°C
°C
°C
μA
V
μA
Note: the values with “*1” are our targeted values, but not guaranteed.
No. A1446-2/11
TN5D01A
Pin Functions
Pin No.
1
2
3
4
5
Symbol
VIN
GND
SWOUT
FB
SS
GND
Pulse Voltage Output
Feedback from Output Voltage
For Soft Start Capacitor Connection and Standby Mode Switching
Function
Power Supply Input (Maximum 57V)
Application Circuit Example
1 VIN
VIN
5 SS
+
2 GND
SWOUT 3
VOUT
FB 4
+
GND
GND
7
5
3
2
Forward Bias A S O
10
2.5
PD -- Ta
0
μ
Allowable Power Dissipation, PD -- W
IDP= --36A
<10μs
10
s
μ
s
2.0
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
ID= --9A
10
1m
ms
10
0m
DC
op
s
era
tio
n
s
1.5
No
h
ea
ts
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
1.0
ink
0.5
--0.1
--0.1
5 7 --10
2
3
5 7 --100
IT13246
0
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
20
PD -- Tc
Ambient Temperature, Ta --
°C
IT12620
Allowable Power Dissipation, PD -- W
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT13750
No. A1446-4/11
TN5D01A
Specified Circuit for Electrical Characteristics
[Circuit] (VOUT=3.3V)
IC1
VIN
1 2 3 4 5
+
C1
C3
D1
C6
+
R2
C2
R3
R1
VOUT
L1
GND
GND
Component
Specification
3000 to 3600μF
2000 to 2200μF
0.1μF
1000pF
1.8kΩ/1/2W
1kΩ/1/2W
47Ω/2W
100μH
SBT250-06J
[Components] (VOUT=3.3V)
Symbol
C1
C2
C3
C6
R1
R2
R3
L1
D1
Electrolytic Capacitor
Electrolytic Capacitor
Capacitor
Ceramic Capacitor
Carbon Resistor
Carbon Resistor
Metal Oxide Film Resistor
Choke Coil
Schottky Barrier Diode
* When measuring ripple noise voltage, put 47
μ
F (electrolytic capacitor) and 0.1
μ
F (ceramic or
fi
lm capacitor) into measuring point.
Evaluation Board
[Circuit] (VOUT=3.3V)
F1
VIN
FUSE
1 2 3 4 5
+
C1A
+
C1B
+
C1C
C7
C3
D1
C6
C5
+ C2A
R2
L1
IC1
R3
C4
R1
VOUT
GND
GND
[Components]
Symbol
F1
C1A
C1B
C1C
C2A
C3
C4
C5
C6
C7
R1
R2
R3
L1
D1
Fuse
Electrolytic Capacitor
Electrolytic Capacitor
Electrolytic Capacitor
Electrolytic Capacitor
Film Capacitor
N.C.
N.C.
Ceramic Capacitor
Ceramic Capacitor
Carbon Resistor
Carbon Resistor
Metal Oxide Film Resistor
Choke Coil
Schottky Barrier Diode
1000pF
47000pF
1.8kΩ/1/2W
1kΩ/1/2W
22Ω/2W
HK-10S100-1010
SBT250-06J
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Matsushita Electronic Components Corp.
Matsushita Electronic Components Corp.
Matsushita Electronic Components Corp.
TOHO ZINC CO.,LTD.
SANYO Semiconductor Co., Ltd.
100μH
Component
4A
1200μF/80V
1200μF/80V
1200μF/80V
2200μF/80V
0.1μF/100V
Specification
Littelfuse
Nippon Chemi-Con Corp.
Nippon Chemi-Con Corp.
Nippon Chemi-Con Corp.
SANYO Electronic Co., Ltd.
Matsushita Electronic Components Corp.
Maker
Remark
452 004
KZE
KZE
KZE
MV
ECQ-B
No. A1446-5/11
京公网安备 11010802033920号
EEWORLD
