AOD419
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD419 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD419 is Pb-free (meets ROHS & Sony 259
specifications). AOD419L is a Green Product
ordering option. AOD419 and AOD419L are
electrically identical.
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Features
V
DS
(V) = -40V
(V
GS
= -10V)
I
D
= -20A
R
DS(ON)
< 40mΩ (V
GS
= -10V)
R
DS(ON)
< 65mΩ (V
GS
= -4.5V)
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
C
Avalanche Current
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
-40
±20
-20
-18
-60
-20
60
50
25
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD419
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-10mA, V
GS
=0V
V
DS
=-32V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
V
DS
=-5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
T
J
=125°C
-1
-60
33
45
52
16
-0.75
-1
-20
657
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
143
63
6.5
14.1
V
GS
=-10V, V
DS
=-20V, I
D
=-20A
7
2.2
4.1
8
V
GS
=-10V, V
DS
=-20V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=-20A, dI/dt=100A/µs
12.2
24
12.5
23.2
18.2
850
185
90
40
54
65
-2.2
Min
-40
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation PDSM is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0: Aug. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
-I
D
(A)
15
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
90
Normalized On-Resistance
80
70
R
DS(ON)
(m
Ω
)
60
50
40
30
20
0
5
10
15
20
25
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
I
D
=-20A
80
R
DS(ON)
(m
Ω
)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
60
125°C
-I
S
(A)
1.0E-02
1.0E-03
40
25°C
20
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°
125°C
V
GS
=-10V
V
GS
=-4.5V
1.80
1.60
1.40
1.20
1.00
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-10V
I
D
=-20A
-4.5V
-I
D
(A)
-10V
25
V
DS
=-5V
20
I
D
=-10mA,
-6V
=0V
V
GS
10
125°C
V
GS
=-3.5V
5
25°C
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
850
185
90
V
GS
=-4.5V
I
D
=-5A
Alpha & Omega Semiconductor, Ltd.
AOD419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-20A
1000
8
-V
GS
(Volts)
I
D
=-10mA, V
GS
=0V
Capacitance (pF)
750
C
iss
6
500
C
oss
250
C
rss
4
2
0
0
3
6
9
12
15
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
R
DS(ON)
limited
10ms
1.0
T
J(Max)
=175°C,
T
C
=25°C
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
DC
200
160
850
185
90
T
J(Max)
=175°C
T
C
=25°C
-I
D
(Amps)
10.0
100µs
Power (W)
1ms
120
80
40
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
0.01
0.00001
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-I
D
(A), Peak Avalanche Current
20
15
10
5
0
0.00001
T
A
=25°C
60
Power Dissipation (W)
I
D
=-10mA, V
GS
=0V
50
40
30
20
10
0
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Power (W)
60
50
40
30
20
10
0
0.001
850
185
90
T
A
=25°C
Current rating -I
D
(A)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.01
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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