GAAS N-CHANNEL DUAL-GATE MES FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | , |
| Reach Compliance Code | unknow |
| Maximum drain current (Abs) (ID) | 0.055 A |
| FET technology | METAL SEMICONDUCTOR |
| JESD-609 code | e0 |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.15 W |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
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